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PDF UNR521W Data sheet ( Hoja de datos )
| Número de pieza | UNR521W | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors with built-in Resistor
UNR521W
Silicon NPN epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
SMini type package allowing easy automatic insertion through tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
VCBO
VCEO
Collector current
IC
Total power dissipation
Junction temperature
Storage temperature
PT
Tj
Tstg
Rating
50
50
100
150
150
–55 to +150
Unit
V
V
mA
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10°
1: Base
2: Emitter
3: Collecter
Marking Symbol: 9F
Internal Connection
SMini3-G1 Package
B
R2
(100 kΩ)
C
E
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
VCBO
VCEO
ICBO
ICEO
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
VCB = 50 V, IE = 0
VCE = 50 V, IB = 0
50
50
0.1
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
100
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
80
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
Input resistance
R2
—30% 100 +30%
Transition frequency
fT VCB = 10 V, IE = —2 mA, f = 200 MHz
100
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
µA
µA
µA
V
kΩ
MHz
Publication date: December 2004
SJH00111AED
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet UNR521W.PDF ] | |
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