(PDF) BLH3355 Datasheet - NPN EPITAXIAL SILICON RF TRANSISTOR CHIP

Número de pieza	BLH3355
Descripción	NPN EPITAXIAL SILICON RF TRANSISTOR CHIP
Fabricantes	SHANGHAI BELLING
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No Preview Available ! www.DataSheet4U.com BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP (BLH3355) Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure Planar type Electrodes: Aluminum alloy Backside metal: Au alloy Size Chip size: 370µm ×370µm Chip thickness: 220±20µm. Pad size: φ100µm ABSOLUTE MAXIMUM RATING Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Value 20 12 3.0 100 200 150 −65 to +150 Unit V V V mA mW °C °C ELECTRICAL CHARACTERISTICS Tj = 25oC unless otherwise specified Symbol Parameter ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE DC Current Gain Test conditions VCB=10V, IE=0mA VEB=1.0V, IC=0mA VCE =10V, IC=20mA Min. - - 50 Typ. - - 120 Max. 1.0 1.0 250 Unit µA µA nA http://www.belling.com.cn -1- Total 2 Pages 8/18/2006 1 page

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