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PDF TGA2509 Data sheet ( Hoja de datos )
| Número de pieza | TGA2509 | |
| Descripción | Wideband 1 W HPA | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TGA2509 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Advance Product Information
February 1, 2006
Wideband 1 W HPA with AGC
TGA2509
Product Description
The TriQuint TGA2509 is a compact
Wideband High Power Amplifier with
AGC. The HPA operates from 2-22 GHz
and is designed using TriQuint’s proven
standard 0.25 um gate pHEMT production
process.
The TGA2509 provides >28.5 dBm of
output power at 1 dB gain compression
with small signal gain of 17 dB. Typical
saturated power is 30 dBm from 2-16
GHz.
The TGA2509 is suitable for a variety of
wideband electronic warfare systems
such as radar warning receivers,
electronic counter measures,decoys,
jammers and phased array systems.
The TGA2509 is 100% DC and RF tested
on-wafer to ensure performance
compliance.
Lead-free and RoHS compliant
Key Features
• Frequency Range: 2-22 GHz
• 30 dBm Nominal Psat (2-16 GHz)
• >29 dBm Nominal Psat (2-20 GHz)
• >28.5 dBm Output P1dB
• 17 dB Nominal Gain
• > 25 dB AGC Range
• 0.25 um 3MI pHEMT Technology
• Nominal Bias 12 V @ 1.1 A
• Chip Dimensions: 2.30 x 3.20 x 0.10 mm
(0.091 x 0.126 x 0.004 in)
Primary Applications
• Wideband Gain Block
• Military EW and ECM
• Test Equipment
Measured Fixtured Data
Bias Conditions: Vd =12 V, Id= 1.1 A
20 20
16
12 Gain
16
12
88
44
00
-4 -4
-8 Input
-8
-12 -12
-16 -16
-20 Output
-20
-24 -24
0 3 6 9 12 15 18 21 24 27 30
Frequency (GHz)
34
32
30
28
26
24
Psat
P1dB
22
20
2 4 6 8 10 12 14 16 18 20 22 24 26
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com
1 page  
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Advance Product Information
February 1, 2006
Mechanical Characteristics
TGA2509
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: [email protected] Web: www.triquint.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TGA2509.PDF ] | |
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