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PDF TGA2505 Data sheet ( Hoja de datos )
| Número de pieza | TGA2505 | |
| Descripción | Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Advance Product Information
April 5, 2006
13 - 17 GHz 2.5 Watt, 25dB Power Amplifier
TGA2505
Preliminary Measured Performance
Bias Conditions: Vd=7V Id=640mA
30
10
25 5
S21
20 S11 0
S22
15 -5
10 -10
Key Features and Performance
• 34 dBm Midband Pout
• 25 dB Nominal Gain
• 7 dB Typical Input Return Loss
• 12 dB Typical Output Return Loss
• Built-in Directional Power Detector
with Reference
• 0.25µm pHEMT Technology
• Bias Conditions: 7V, 640mA
• Chip dimensions:
2.03 x 1.39 x 0.10 mm
(0.080 x 0.055 x 0.004 inches)
Primary Applications
• VSAT
• Point-to-Point
5 -15
0 -20
11 12 13 14 15 16 17 18 19
Frequency (GHz)
35 60
34 55
33 50
32 45
31 Psat 40
30 PAE 35
29 30
28 25
27 20
26 15
25 10
11 12 13 14 15 16 17 18 19
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
1
1 page  
35
34.5
34
33.5
33
32.5
32
31.5
31
30.5
30
11
40
35
Advance Product Information
April 5, 2006
Typical Fixtured Performance
TGA2505
Psat
P2dB
12 13 14 15 16 17 18 19
Frequency (GHz)
PAE @ Psat
PAE @ P2dB
30
25
20
15
10
11 12 13 14 15 16 17 18 19
Frequency (GHz)
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
5
5 Page 
Advance Product Information
April 5, 2006
TGA2505
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TGA2505.PDF ] | |
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