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Fairchild Semiconductor - Single P-Channel Specified PowerTrench MOSFET

Numéro de référence FDY100PZ
Description Single P-Channel Specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDY100PZ fiche technique
www.DataSheet4U.com
January 2006
FDY100PZ
Single P-Channel (– 2.5V) Specified PowerTrench® MOSFET
General Description
This Single P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the RDS(ON) @ VGS = – 2.5v.
Applications
Li-Ion Battery Pack
Features
– 350 mA, – 20 V RDS(ON) = 1.2 @ VGS = – 4.5 V
RDS(ON) = 1.6 @ VGS = – 2.5 V
ESD protection diode (note 3)
RoHS Compliant
1S
G
D
G1
S2
3D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a) 1a)
Power Dissipation (Steady State)
(Note 1a) 1a)
(Note 1b) 1b)
Operating and Storage Junction Temperature
Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a)
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
A
FDY100PZ
7’’
Ratings
– 20
±8
– 350
– 1000
625
446
–55 to +150
200
280
Tape width
8mm
Unit
s
V
V
mA
mW
°C
°C/W
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDY100PZ Rev A
www.fairchildsemi.com

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