|
|
PDF ECP200D Data sheet ( Hoja de datos )
| Número de pieza | ECP200D | |
| Descripción | High Linearity InGaP HBT Amplifier | |
| Fabricantes | WJ Communication | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de ECP200D (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
• 400 – 2300 MHz
• +33 dBm P1dB
• +51 dBm Output IP3
• 18 dB Gain @ 900 MHz
• +5V Single Positive Supply
• MTTF > 100 Years
• 16-pin 4x4mm Lead-free/Green/
RoHS-compliant QFN Package
Applications
• Final stage amplifiers for Repeaters
• Mobile Infrastructure
Product Description
Functional Diagram
The ECP200D is a high dynamic range driver amplifier
in a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +51
dBm OIP3 and +33 dBm of compressed 1dB power. It
is housed in an industry standard in a lead-free/
green/RoHS-compliant 16-pin 4x4mm QFN surface-
mount package. All devices are 100% RF and DC
tested.
16 15 14 13
Vref 1
12 N/C
N/C 2
11 RF OUT
RF IN 3
10 RF OUT
N/C 4
9 N/C
5678
The ECP200D is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP200D to maintain high linearity over temperature
and operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
transceiver line cards in current and next generation
multi-carrier 3G base stations.
Function
Vref
RF Input
RF Output
Vbias
GND
N/C or GND
Pin No.
1
3
10, 11
16
Backside Paddle
2, 4-9, 12-15
Specifications (1)
Typical Performance (4)
Parameter
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Gain dB
Input Return Loss
dB
Output Return Loss
dB
P1dB
Output IP3 (2)
dBm
dBm
IS-95A Channel Power
@ -45 dBc ACPR, 1960 MHz
wCDMA Channel Power
@ -45 dBc ACLR, 2140 MHz
Noise Figure
Operating Current Range, Icc (3)
dBm
dBm
dB
mA
Device Voltage, Vcc
V
Min
400
9
+32
+47
700
Typ
2140
10
20
6.8
+33.2
+48
+27.5
+25.3
7.7
800
+5
Max
2300
900
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin
1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current
typically will be 822 mA.)
Parameter
Frequency
S21 – Gain
S11 – Input R.L.
S22 – Output R.L.
P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
wCDMA Channel Power
@ -45 dBc ACLR
Noise Figure
Device Bias (3)
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
900 1960 2140
18 11 10
-18 -19 -20
-11 -6.8 -6.8
+33 +33.4 +33.2
+49 +51 +48
+27 +27.5
+25.3
8.0 7.3 7.7
+5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 °C
-65 to +150 °C
+28 dBm
+8 V
1400 mA
8W
+250 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
ECP200D-G
ECP200D-PCB900
ECP200D-PCB1960
ECP200D-PCB2140
Description
2 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 6 April 2006
1 page  
ECP200D
2 Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
2140 MHz Application Circuit (ECP200D-PCB2140)
Typical RF Performance at 25 °C
Frequency
2140 MHz
S21 – Gain
10 dB
S11 – Input Return Loss
-20 dB
S22 – Output Return Loss
-6.8 dB
Output P1dB
+33.2 dBm
Output IP3
(+17 dBm / tone, 1 MHz spacing)
W-CDMA Channel Power
(@ -45 dBc ACLR)
+48 dBm
+25.3 dBm
Noise Figure
7.7 dB
Device / Supply Voltage
+5 V
Quiescent Current (1)
800 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 10, 11, and 16.
ID=C1
C=56 pF
ID=R3
R=51 Ohm
ID=C2
C=56 pF
ID=C11
R=0 Ohm
ID=R1
R=15 Ohm
ID=C4
C=1000 pF
ID=R4
R=0 Ohm
Vsupply = +5V
+5.6V Zener
ID=R2
R=22 Ohm
ID=C3
C=1e7 pF
ID=C6
C=1000 pF
TLINP
ID=TL1
Z0=50 Ohm
L=175 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=C8
C=3 pF
16 15 14 13
1
2
ID=ECP200D
3
4
5678
C8 should be placed at silk screen marker "D"
on the WJ evaluation board.
12
ID=L1
L=18 nH
11 size 1008
10
TLINP
9 ID=TL2
Z0=50 Ohm
L=75 mil
Eeff=3.16
Loss=0
F0=0 GHz
C9 should be placed at
silkscreen marker "2"
on the WJ evaluation board.
ID=C5
C=10 pF
TLINP
ID=TL3
Z0=50 Ohm
L=100 mil
Eeff=3.16
Loss=0
F0=0 GHz
ID=C3
C=56 pF
ID=C9
C=3 pF
ID=C10
C=1.5 pF
C10 should be placed at
silkscreen marker "4" on
the WJ evaluation board.
S21 vs. Frequency
12
11
10
9
8
+25°C -40°C +85°C
7
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
NoiseFigure vs. Frequency
10
S11 vs. Frequency
0
+25°C -40°C +85°C
-5
-10
-15
-20
-25
-30
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P1dBvs. Frequency
Circuit boardsare optimizedat 2140MHz
36
S22 vs. Frequency
0
-5
-10
-15
+25°C -40°C +85°C
-20
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
ACPRvs. Channel Power
3GPPW-CDMA, Test Model 1+64DPCH, ±5MHz offset, 2140MHz
-35
8 34 -40
6 32 -45
4 30 -50
2
-40°C +25°C +85°C
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
28
-40°C +25°C +85°C
26
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
-55
-60
22
OIP3 vs. Frequency
+25° C, +17 dBm/tone
55
OIP3 vs. Temperature
freq. =2140 MHz, 2141MHz, +17dBm/tone
55
55
-40 C +25C +85 C
23 24 25 26
Output Channel Power (dBm)
OIP3vs. Output Power
freq. =2140MHz, 2141MHz, +25° C
27
50 50 50
45 45 45
40 40 40
35
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
35
-40
-15 10 35
Temperature (°C)
60
35
85 12
14 16 18 20
Output Power (dBm)
22
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 6 April 2006
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ECP200D.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ECP200 | 2.0 WATT POWER AMPLIFIER |  EIC discrete Semiconductors |
| ECP200D | High Linearity InGaP HBT Amplifier | WJ Communication |
| ECP200G | High Linearity InGaP HBT Amplifier | WJ Communication |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |