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PDF ECP100G Data sheet ( Hoja de datos )
| Número de pieza | ECP100G | |
| Descripción | High Gain HBT Amplifier | |
| Fabricantes | WJ Communication | |
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AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
• 400 – 2300 MHz
• +31.5 dBm P1dB
• +46 dBm Output IP3
• 18 dB Gain @ 900 MHz
• Single Positive Supply (+5 V)
• Lead-free/green/RoHS-compliant
SOIC-8 SMT Pkg.
Applications
• Final stage amplifiers for Repeaters
• Mobile Infrastructure
• Defense / Homeland Security
The AH215 / ECP100 is a high dynamic range driver
amplifier in a low-cost surface mount package. The
InGaP/GaAs HBT is able to achieve superior performance
for various narrowband-tuned application circuits with up
to +46 dBm OIP3 and +31.5 dBm of compressed 1-dB
power. The part is housed in a lead-free/green/RoHS-
compliant SOIC-8 package. All devices are 100% RF and
DC tested.
The product is targeted for use as driver amplifier for
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
where high linearity and high power is required. The
internal active bias allows the AH215 / ECP100 to maintain
high linearity over temperature and operate directly off a
+5 V supply.
18
27
36
45
Function
Vref
Input
Output
Vbias
GND
N/C or GND
Pin No.
1
3
6, 7
8
Backside Paddle
2, 4, 5
Specifications (1)
Parameters
Units
Operational Bandwidth
MHz
Test Frequency
MHz
Gain dB
Input Return Loss
dB
Output Return Loss
dB
Output P1dB
Output IP3 (2)
dBm
dBm
Noise Figure
dB
IS-95 Channel Power
@ -45 dBc ACPR, 1960MHz
W-CDMA Channel Power
@ -45 dBc ACPR, 2140 MHz
Operating Current Range , Icc (3)
dBm
dBm
mA
Device Voltage, Vcc
V
Min
400
10
+29
+43.8
400
Typ
2140
11
18
8
+31.5
+45
6.3
+25.5
+23
450
5
Max
2300
500
1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current
typically will be 461 mA.)
Typical Performance (4)
Parameters
Frequency
S21 – Gain
S11
S22
Output P1dB
Output IP3
IS-95A Channel Power
@ -45 dBc ACPR
W-CDMA Channel Power
@ -45 dBc ACPR
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dBm
dBm
dB
Typical
900 1960 2140
18 12 11
-13 -11 -18
-7 -10 -8
+31 +32 +31.5
+46 +46 +45
+25.5 +25.5
+23
7.0 5.5 6.2
+5 V @ 450 mA
4. Typical parameters reflect performance in a tuned application circuit at +25° C.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Device Power
Junction Temperature
Rating
-40 to +85 °C
-65 to +150 °C
+26 dBm
+8 V
900 mA
5W
+250 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
Description
AH215-S8*
ECP100G*
AH215-S8G
AH215-S8PCB900
1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
1 Watt, High Linearity InGaP HBT Amplifier
(lead-tin SOIC-8 Pkg)
1 Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
900 MHz Evaluation Board
AH215-S8PCB1960 1960 MHz Evaluation Board
AH215-S8PCB2140 2140 MHz Evaluation Board
* This package is being phased out in favor of the green package type which is backwards compatible for
existing designs. Refer to Product Change Notification WJPCN06MAY05TC1 on the WJ website.
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 9 June 2005
1 page  
AH215 / ECP100G
1 Watt, High Gain HBT Amplifier
Product Information
2140 MHz Application Circuit (AH215-S8PCB2140)
Typical RF Performance at 25°C
Frequency
2140 MHz
S21 – Gain
11 dB
S11 – Input Return Loss
-18 dB
S22 – Output Return Loss
-8.0 dB
Output P1dB
+31.5 dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Channel Power
(@-45 dBc ACPR, IS-95 9 channels fwd)
Noise Figure
+45 dBm
+23 dBm
6.2 dB
Device / Supply Voltage
+5 V
Quiescent Current (1)
450 mA
1. This corresponds to the quiescent current or operating current under
small-signal conditions into pins 6, 7, and 8.
S21 vs. Frequency
15
12
9
6 +25°C
+85°C
3 -40°C
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
Noise Figure vs. Frequency
9
8
7
6
5
4
3
+25°C
2 +85°C
1 -40°C
0
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 vs. Temperature
freq. = 2140, 2141 MHz, +15 dBm / tone
50
47
44
41
38
35
-40
-15 10 35 60
Temperature (°C )
85
S11 vs. Frequency
-10
-14
-18
-22 +25°C
+85°C
-26 -40°C
-30
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
P1 dB vs. Frequency
34
32
30
+25°C
28 +85°C
26 -40°C
24
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
OIP3 vs. Frequency
+25°C, +15 dBm / tone
50
47
44
41
38
35
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
S22 vs. Frequency
0
-5
-10
+25°C
-15 +85°C
-40°C
-20
2110 2120 2130 2140 2150 2160 2170
Frequency (MHz)
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1+64 DPCH, ±5MHz offset, 2140 MHz
-40
-45
-50
-55 +25°C
+85°C
-60 -40°C
-65
19
50
20 21 22 23
Output Channel Power (dBm)
OIP3 vs. Output Power
freq. = 2140, 2141 MHz, 25°C
24
47
44
41
38
35
10 12 14 16 18 20 22
Output Power (dBm)
Specifications and information are subject to change without notice.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 9 June 2005
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ECP100G.PDF ] | |
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