|
|
Numéro de référence | AH114 | ||
Description | High Linearity InGaP HBT Amplifier | ||
Fabricant | WJ Communication | ||
Logo | |||
1 Page
www.DataSheet4U.com
AH114
¼ Watt, High Linearity InGaP HBT Amplifier
The Communications Edge TM
Product Information
Product Features
x 60 – 2500 MHz
x +24 dBm P1dB
x +41 dBm Output IP3
x 19 dB Gain @ 900 MHz
x 14.5 dB Gain @ 1900 MHz
x +5V Single Positive Supply
x Lead-free / Green / RoHS-
compliant SOT-89 Package
Applications
x Final stage amplifiers for
Repeaters
x Mobile Infrastructure
x DBS / WLL / WLAN / WiBro
x Defense / Homeland Security
Product Description
The AH114 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve high performance across a broad range with
+41 dBm OIP3 and +24 dBm of compressed 1dB power. It
is housed in a lead-free/green/RoHS-compliant SOT-89
SMT package. All devices are 100% RF and DC tested.
The AH114 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
AH114 to maintain high linearity over temperature and
operate directly off a single +5V supply. This combination
makes the device an excellent candidate for transceiver line
cards in current and next generation multi-carrier 3G base
stations.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Function
Input / Base
Output / Collector
Ground
Pin No.
1
3
2, 4
Specifications (1)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
IS-95A Channel Power
@ -45 dBc ACPR
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3 (2)
Operating Current Range
Device Voltage
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
mA
V
Min
60
13.5
+39.5
130
Typ
1900
14.5
10
14
+23
+41
+17
5.0
2140
14
+23
+40
150
+5
Max
2500
170
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Typical Performance (1)
Parameters
Frequency
S21 - Gain
S11 - Input R.L.
S22 - Output R.L.
Output P1dB
Output IP3
Noise Figure
Supply Bias
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
900 1900 2140
19 14.5 14
-14 -10 -25
-10 -14 -20
+24 +23 +23
+40 +41 +40
5.0 5.0 6.0
+5 V @ 150 mA
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Device Current
Junction Temperature
Rating
-40 to +85 qC
-65 to +150 qC
+15 dBm
+6 V
220 mA
+250 qC
Ordering Information
Part No.
AH114-89G
AH114-89PCB900
AH114-89PCB1900
AH114-89PCB2140
Description
¼ Watt, High Linearity InGaP HBT Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
900 MHz Evaluation Board
1900 MHz Evaluation Board
2140 MHz Evaluation Board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: [email protected] Web site: www.wj.com
Page 1 of 6 April 2006
|
|||
Pages | Pages 6 | ||
Télécharger | [ AH114 ] |
No | Description détaillée | Fabricant |
AH11 | High Dynamic Range Dual Amplifier | WJ Communication |
AH11 | High Dynamic Range Dual Amplifier | TriQuint Semiconductor |
AH110 | High Linearity InGaP HBT Amplifier | WJ Communication |
AH114 | High Linearity InGaP HBT Amplifier | WJ Communication |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |