|
|
PDF IRF6641TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6641TRPBF | |
| Descripción | N-Channel HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRF6641TRPBF (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
PD - 97262
IRF6641TRPbF
l RoHS Compliant
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
200V max ±20V max 51mΩ@ 10V
Qg tot
Qgd
Vgs(th)
34nC
9.5nC
4.0V
MZ
DirectFET ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP
MZ MN
Description
The IRF6641PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6641PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for wide range 36V-
75V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance
enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal
for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
200
±20
4.6
3.7
26
37
46
11
Units
V
A
mJ
A
200
180
160
140
120
100
80
60
40
20
0
4
I D = 5.5A
T J = 125°C
T J = 25°C
6 8 10 12 14 16
V GS, Gate -to -Source Voltage (V)
12.0
10.0
8.0
6.0
I D = 5.5A
V DS = 160V
V DS = 100V
V DS = 40V
4.0
2.0
0.0
0
5 10 15 20 25 30 35 40
Q G , Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.77mH, RG = 25Ω, IAS = 11A.
1
10/02/06
1 page  
www.DataSheet4U.com
100
TJ = 150°C
TJ = 25°C
TJ = -40°C
10
IRF6641TRPbF
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
5
1
0.1 Tc = 25°C
Tj = 150°C
Single Pulse
0.01
01
10msec
100µsec
1msec
10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
4 5.0
3
4.0
2 ID = 150µA
3.0
ID = 250µA
ID = 1.0mA
1 ID = 1.0A
0
25 50 75 100 125 150
TA , Ambient Temperature (°C)
Fig 12. Maximum Drain Current vs. Ambient Temperature
200
180
160
140
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
ID TOP
3.7A
5.7A
BOTTOM 11A
120
100
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
www.irf.com
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF6641TRPBF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRF6641TRPBF | N-Channel HEXFET Power MOSFET | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |