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PDF IRF6648 Data sheet ( Hoja de datos )
| Número de pieza | IRF6648 | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 97043C
IRF6648
DirectFET Power MOSFET
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Optimized for High Frequency Switching
l Optimized for Synchronous Rectification for 5V
to 12V outputs
l Ideal for 24V input Primary Side Forward Converters
l Low Conduction Losses
l Compatible with Existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
Qg tot Qgd
60V max ±20V max 5.5mΩ@ 10V 36nC 14nC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH SJ SP
MZ MN
DirectFET
ISOMETRIC
Description
The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving
previous best thermal resistance by 80%.
The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a
primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal
performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this
device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
IS @ TC = 25°C
IS @ TC = 70°C
ISM
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
ePulsed Drain Current
fContinuous Source Current (Body Diode)
fContinuous Source Current (Body Diode)
ePulsed Source Current (Body Diode)
Max.
60
±20
86
69
260
81
52
260
Units
V
A
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating; pulse width limited by max. junction temperature.
TC measured with thermocouple mounted to top (Drain) of part.
www.irf.com
1
02/28/06
1 page  
60
ID = 17A
50
40
30
20
TJ = 125°C
10
0 TJ = 25°C
4 6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 8. Typical On-Resistance vs. Gate Voltage
1000
TJ = 150°C
100
TJ = 25°C
TJ = -40°C
30
25 Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
20 Vgs = 15V
IRF6648
TJ = 25°C
15
10
5
0
0 20 40 60 80 100
ID, Drain Current (A)
Fig 9. Typical On-Resistance vs. Drain Current
6.0
5.0
10
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1msec
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
01
10 100
VDS, Drain-to-Source Voltage (V)
Fig12. Maximum Safe Operating Area
www.irf.com
4.0
ID = 150µA
3.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 11. Typical Threshold Voltage vs.
Junction Temperature
200
180 ID TOP
12A
160 18A
140 BOTTOM 34A
120
100
80
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF6648.PDF ] | |
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