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PDF NSR0140P2T5G Data sheet ( Hoja de datos )

Número de pieza NSR0140P2T5G
Descripción Schottky Barrier Diode
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NSR0140P2T5G
Schottky Barrier Diode
These Schottky barrier diodes are designed for high−speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand−held and portable
applications where space is limited.
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc
Low Reverse Current
Lead−Free Plating
This is a Pb−Free Device
http://onsemi.com
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Peak Reverse Voltage
VRM
40
V
Reverse Voltage
Forward Continuous Current (DC)
VR 30 V
IF 30 mA
Peak Forward Surge Current
IFSM 500 mA
ESD Rating: Class 1C per Human Body Model
Class A per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
100 mW
1.0 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
1000
°C/W
Junction and Storage
Temperature Range
1. FR−5 Minimum Pad.
TJ, Tstg −55 to +125 °C
MARKING
2 DIAGRAM
1
SOD−923
CASE 514AA
PLASTIC
M MG
G
12
M = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSR0140P2T5G SOD−923
2 mm Pitch
8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 0
1
Publication Order Number:
NSR0140P2/D

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