PDF NTD32N06 Data sheet ( Hoja de datos )

Número de pieza	NTD32N06
Descripción	N-Channel DPAK
Fabricantes	ON Semiconductor
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No Preview Available ! www.DataSheet4U.com NTD32N06 Power MOSFET 32 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available • Smaller Package than MTB36N06V • Lower RDS(on) • Lower VDS(on) • Lower Total Gate Charge • Lower and Tighter VSD • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage, Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VDGR VGS VGS ID ID IDM PD TJ, Tstg 60 60 "20 "30 Vdc Vdc Vdc 32 22 90 93.75 0.625 2.88 1.5 −55 to +175 Adc Apk W W/°C W W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (Note 3) (VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 25 A, VDS = 60 Vdc, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RqJC RqJA RqJA TL 313 mJ 1.6 °C/W 52 100 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). 3. Repetitive rating; pulse width limited by maximum junction temperature. © Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 3 1 http://onsemi.com V(BR)DSS 60 V RDS(on) TYP 26 mW ID MAX 32 A N−Channel D G S 4 12 3 MARKING DIAGRAMS 4 Drain DPAK CASE 369C STYLE 2 1 Gate 2 Drain 3 Source 4 DPAK−3 CASE 369D STYLE 2 4 Drain 1 2 3 12 3 Gate Drain Source 32N06 A Y WW = Device Code = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: NTD32N06/D 1 page 10 Normalized to RqJC at Steady State NTD32N06 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 13. Thermal Response 10 Normalized to RqJA at Steady State, 1″ square Cu Pad, Cu Area 1.127 in2, 3 x 3 inch FR4 board 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 Figure 14. Thermal Response 10 100 1000 http://onsemi.com 5 5 Page

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