PDF IRH7250 Data sheet ( Hoja de datos )

Número de pieza	IRH7250
Descripción	(IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
Fabricantes	International Rectifier
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No Preview Available ! www.DataSheet4U.com PD - 90697B REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRH7250 IRH8250 N CHANNEL MEGA HARD RAD 200Volt, 0.11Ω, MEGA RAD HARD HEXFET Product Summary International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, In- ternational Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviv- ing transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. They are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. Absolute Maximum Ratings Part Number IRH7250 IRH8250 BVDSS 200V 200V RDS(on) 0.11Ω 0.11Ω ID 26A 26A Features: n Radiation Hardened up to 1 x 106 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed Pre-Irradiation Parameter IRH7250, IRH8250 Units ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor 26 16 A 104 150 W 1.2 W/°C VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ±20 500 26 15 5.0 V mJ A mJ V/ns TJ TSTG Operating Junction Storage Temperature Range Lead Temperature -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) oC Weight 11.5 (typical) g www.irf.com 1 10/14/98 1 page IRH7250, IRH8250 Devices Post-Irradiation Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response Fig 8b. VDSS Stress Equals of Rad Hard HEXFET During 80% of BVDSS During Radiation 1x1012 Rad (Si)/Sec Exposure Fig 9. High Dose Rate (Gamma Dot) Test Circuit www.irf.com 5 5 Page IRH7250, IRH8250 Devices Pre-Irradiation 15V VDS L D R IV E R RG 1220VV tp D .U .T IA S 0.01Ω + - VDD A Fig 29a. Unclamped Inductive Test Circuit V (B R )D S S tp Fig 29c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 29b. Unclamped Inductive Waveforms 12 V QGS VG QG QGD Charge Fig30a. Basic Gate Charge Waveform www.irf.com Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF + D.U.T. -VDS VGS 3mA IG ID Current Sampling Resistors Fig 30b. Gate Charge Test Circuit 11 11 Page

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