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PDF IDT10S60C Data sheet ( Hoja de datos )

Número de pieza IDT10S60C
Descripción 2nd Generation thinQ SiC Schottky Diode
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! IDT10S60C Hoja de datos, Descripción, Manual

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2nd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHs compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDT10S60C
600 V
24 nC
10 A
PG-TO220-2-2
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
IDT10S60C
Package
PG-TO220-2-2
Marking
I F=5 A, T j=25 °C
D10S60C
Pin 1
C
Pin 2
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
RMS forward current
IF
I F,RMS
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C<140 °C
f =50 Hz
T C=25 °C, t p=10 ms
Repetitive peak forward current
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode ruggedness dv/dt
Power dissipation
Operating and storage temperature
Mounting torque
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
I F,max
i 2dt
V RRM
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
dv/ dt
P tot
T j, T stg
VR=0…480V
T C=25 °C
M3 and M3.5 screws
Rev. 2.0
page 1
Value
10
15
84
39
350
35
600
50
100
-55 ... 175
60
Unit
A
A2s
V
V/ns
W
°C
Ncm
2006-03-14

1 page




IDT10S60C pdf
9 Typ. C stored energy
E C=f(V R)
IDT10S60C
10 Typ. Capacitive charge vs. current slope
Q C=f(di F/dt )4); T j=150 °C; I FI F,max
14
12
10
8
6
4
2
0
0 100 200 300 400 500 600
V R [V]
25
20
15
10
5
0
100
400 700
di F/dt [A/µs]
1000
Rev. 2.0
page 5
2006-03-14

5 Page










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