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PDF NTP6N50 Data sheet ( Hoja de datos )
| Número de pieza | NTP6N50 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTP6N50
Preferred Devices
Product Preview
Power MOSFET
6 Amps, 500 Volts
N–Channel TO–220
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
• Higher Current Rating
• Lower RDS(on)
• Lower Capacitances
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified
Typical Applications
• Switch Mode Power Supplies
• PWM Motor Controls
• Converters
• Bridge Circuits
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tpv10 ms)
Drain – Continuous @ TA 25°C
– Continuous @ TA 100°C
– Single Pulse (tpv10 µs)
Total Power Dissipation @ TA 25°C
Derate above 25°C
Total Power Dissipation @ TA 25°C (Note 1.)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
500
500
"20
"40
6.0
5.0
18
104
0.83
1.75
–55 to
+150
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Watts
°C
Single Drain–to–Source Avalanche Energy –
Starting TJ = 25°C
(VDD = 100 V, VGS = 10 Vdc,
IL(pk) = 6 A, L = 10 mH, VDS = 500 Vdc,
RG = 25 Ω)
EAS
180 mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
RθJC
RθJA
TL
°C/W
1.2
62.5
260 °C
1. Repetitive rating; pulse width limited by maximum junction temperature.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
6 AMPERES
500 VOLTS
RDS(on) = 1700 mΩ
N–Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
1
2
3
TO–220AB
CASE 221A
STYLE 5
NTP6N50
LLYWW
13
Gate
Source
2
Drain
NTP6N50 = Device Code
LL = Location Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP6N50
TO–220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2001
August, 2001 – Rev. 1
1
Publication Order Number:
NTP6N50/D
1 page  
1
Normalized to RθJC at Steady State
NTP6N50
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 13. Thermal Response
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTP6N50.PDF ] | |
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