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IRF7324PBF fiches techniques PDF

International Rectifier - HEXFET Power MOSFET

Numéro de référence IRF7324PBF
Description HEXFET Power MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRF7324PBF fiche technique
www.DataSheet4U.com
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.1mm)
Available in Tape & Reel
2.5V Rated
Lead-Free
S1
G1
S2
G2
Description
New trench HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
PD - 95460
IRF7324PbF
HEXFET® Power MOSFET
1
2
8 D1
7 D1
VDSS = -20V
3 6 D2
4 5 D2 RDS(on) = 0.018
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-9.0
-7.1
-71
2.0
1.3
16
± 12
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient ƒ
www.irf.com
Units
62.5
°C/W
1
6/29/04

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