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Numéro de référence | IRF7324PBF | ||
Description | HEXFET Power MOSFET | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
www.DataSheet4U.com
● Trench Technology
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Low Profile (<1.1mm)
● Available in Tape & Reel
● 2.5V Rated
● Lead-Free
S1
G1
S2
G2
Description
New trench HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
PD - 95460
IRF7324PbF
HEXFET® Power MOSFET
1
2
8 D1
7 D1
VDSS = -20V
3 6 D2
4 5 D2 RDS(on) = 0.018Ω
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ , TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-20
-9.0
-7.1
-71
2.0
1.3
16
± 12
-55 to + 150
Units
V
A
W
W
mW/°C
V
°C
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient
www.irf.com
Units
62.5
°C/W
1
6/29/04
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Pages | Pages 8 | ||
Télécharger | [ IRF7324PBF ] |
No | Description détaillée | Fabricant |
IRF7324PBF | HEXFET Power MOSFET | International Rectifier |
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