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PDF EDI8L32256C Data sheet ( Hoja de datos )

Número de pieza EDI8L32256C
Descripción Static Ram
Fabricantes EDI 
Logotipo EDI Logotipo



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EDI8L32256C
256Kx32 SRAM Module
Features
256Kx32 bit CMOS Static
DSP Memory Solution
• Texas Instruments TMS320C3x, TMS320C4x
• Analog SHARCTM DSP
• Motorola DSP96002
Random Access Memory Array
• Fast Access Times: 15, 17, 20 and 25ns
• Individual Byte Enables
• User Configurable Organization
with Minimal Additional Logic
• Master Output Enable and Write Control
• TTL Compatible Inputs and Outputs
• Fully Static, No Clocks
Surface Mount Package
• 68 Lead PLCC, No. 99, JEDEC MO-47AE
• Small Footprint, 0.990 Sq. In.
• Multiple Ground Pins for Maximum
Noise Immunity
Single +5V (±5%) Supply Operation
Pin Configurations and Block Diagram
256Kx32, 5V Static Ram
The EDI8L32256C is a high speed, 5V, 8 megabit SRAM.
The device is available with access times of 15, 17, 20 and
25ns, allowing the creation of a no wait state DSP memory
solution.
The device can be configured as a 256Kx32 and used to
create a single chip external data memory solution for
Texas Instruments' TMS320C30/31, TMS 320C32 or
TMS320C4x, Motorola's DSP96002 and Analog Device's
SHARCTM DSP.
Alternatively the device's chip enables can be used to
configure it as a 512Kx16. A 512Kx48 program memory
array for Analog's SHARCTM DSP is created using three
devices. If this memory is too deep, two 256Kx24s
(EDI8L24256C) can be used to create a 256Kx48 array or
two 128Kx24s (EDI8L24128C) can be used to create a
128Kx48 array.
The device provides a 32% space savings when compared
to two monolithic 256Kx16, 44 pin SOJs.
The device provides a memory upgrade of the
EDI8L32128C (128Kx32) and the EDI8L3265C (64Kx32).
For more memory the device can be upgraded to the
EDI8L32512C (512Kx32).
NOTE: Solder Reflow temperature should not exceed 260°C for 10 seconds.
DQ17
DQ18
DQ19
VSS
DQ20
DQ21
DQ22
DQ23
VCC
DQ24
DQ25
DQ26
DQ27
VSS
DQ28
DQ29
DQ30
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60 DQ14
59 DQ13
58 DQ12
57 VSS
56 DQ11
55 DQ10
54 DQ9
53 DQ8
52 VCC
51 DQ7
50 DQ6
49 DQ5
48 DQ4
47 VSS
46 DQ3
45 DQ2
44 DQ1
Note: For memory upgrade information refer to page 8, Figure 8 "EDI MCM-L
upgrade path".
Pin Names
AØ-A17
EØ-E1
BSØ-BS3
W
G
DQØ-DQ31
VCC
VSS
NC
AØ-A17
G
W
E1
BSØ
BS1
BS2
BS3
18
Address Inputs
Chip Enables (One per Word)
Byte Selects (One per Byte)
Master Write Enable
Master Output Enable
Common Data Input/Output
Power (+5V±5%)
Ground
No Connection
256Kx32
Memory
Array
DQØ-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31
Electronic Designs Incorporated
• One Research Drive • Westborough, MA 01581USA • 508-366-5151 • FAX 508-836-4850 •
http://www.electronic-designs.com
1
EDI8L32256C Rev. 4 3/98 ECO#9662

1 page




EDI8L32256C pdf
Write Cycle 2 - E Controlled
A
BSx, E
TAVEL
W
D
Q
EDI8L32256C
256Kx32 SRAM Module
TAVAV
TELEH
TAVEH
TWLEH
HIGH Z
TDVEH
DATA VALID
TEHAX
TEHDX
Ordering Information
Commercial (0°C to 70°C)
Part Number
EDI8L32256C15AC
EDI8L32256C17AC
EDI8L32256C20AC
EDI8L32256C25AC
Speed
(ns)
15
17
20
25
Package
No.
99
99
99
99
Industrial (-40°C to +85°C)
Part Number
EDI8L32256C17AI
EDI8L32256C20AI
EDI8L32256C25AI
Speed
(ns)
17
20
25
Package
No.
99
99
99
Package Description
Package No. 99
68 Lead PLCC
JEDEC MO-47AE
Weight = 4.2g
Theta JA = 40°C/W
Theta JC = 15°C/W
0.995 0.956
Max Max
0.995
Max
0.956
Max
0.180
Max
0.040
Max
0.020
0.015
0.930
0.890
0.050
BSC
0.115
Max
Electronic Designs Incorporated
• One Research Drive • Westborough, MA 01581USA • 508-366-5151 • FAX 508-836-4850 •
http://www.electronic-designs.com
Electronic Designs Inc. reserves the right to change specifications without notice. CAGE No. 66301
5
EDI8L32256C Rev. 4 3/98 ECO#9662

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