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PDF FGPF120N30 Data sheet ( Hoja de datos )
| Número de pieza | FGPF120N30 | |
| Descripción | PDP IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FGPF120N30
300V, 120A PDP IGBT
Features
• High Current Capability
• Low saturation voltage : VCE(sat) = 1.1 V @ IC = 25A
• High input impedance
• Fast switching
Application
PDP SYSTEM
January 2006
General Description
Employing Unified IGBT Technology, Fairchild's PWD series of
IGBTs provides low conduction and switching loss. The PWD
series offers the optimum solution for PDP applications where
low condution loss is essential.
C
TO-220F
1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
IC_pulse (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulse Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 25°C
@ TC = 25°C
@ TC = 25°C
@ TC = 100°C
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Notes
(1) Repetitive test , pulse width=100usec , Duty=0.5
* Ic_pulse limited by max Tj
FGPF120N30
300
± 20
120
180 *
60
24
-55 to +150
-55 to +150
300
Typ. Max.
-- 2.1
-- 62.5
Units
V
V
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FGPF120N30 Rev. A
1
www.fairchildsemi.com
1 page  
Figure 13 Turn-On Characteristics vs.
Collector Current
1000
Comm on Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
tr
td(on)
10
10
Collector Current , Ic [A]
Figure 15. Switching Loss vs.
Gate Resistance
1000
Eoff
100
Figure 14. Turn-Off Characteristics vs.
Collector Current
1000
tf
tf
100
td(off)
Common Emitter
VGE = 15V, RG = 8.7Ω
TC = 25oC
10 TC = 125oC
10
Collector Current , Ic [A]
Figure 16. Switching Loss vs.
Collector Current
100
1000
100 Eon
10
1
Com mon Em itter
VCC = 200V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
10
Gate Resistance, RG [Ω ]
100
Eoff
100
Eoff
Eon
10
Common Emitter
VGE = 15V, RG = 8.7Ω
TC = 25oC
TC = 125oC
10 100
Collector Current , Ic [A]
Figure 17. Transient Thermal Impedance of IGBT
10
1 0.5
0 .2
0 .1
0 .0 5
0 .1
0.0 2
0 .01
0 .0 1
1E -3
1E -5
s in g le p u ls e
1E -4
1E -3
0 .0 1
0 .1
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1 10
FGPF120N30 Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FGPF120N30.PDF ] | |
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