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FDMC2610 fiches techniques PDF

Fairchild Semiconductor - N-Channel UltraFET Trench MOSFET

Numéro de référence FDMC2610
Description N-Channel UltraFET Trench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDMC2610 fiche technique
www.DataSheet4U.com
September 2006
FDMC2610
N-Channel UltraFET Trench® MOSFET
200V, 9.5A, 200m
Features
General Description
tm
„ Max rDS(on) = 200mat VGS = 10V, ID = 2.2A
„ Max rDS(on) = 215mat VGS = 6V, ID = 1.5A
„ Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm
„ RoHS Compliant
This N-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor‘s advanced Power Trench
process. It has been optimized for power management
applications.
Application
„ DC - DC Conversion
Bottom
Top
8
7
6
5
D
D
D
D
54
63
21
43
MLP 3.3x3.3
G
S
S
S
7
8
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage -Continuous (Silicon limited)
Gate to Source Voltage
Drain Current -Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
PD
TJ, TSTG
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
200
±20
9.5
2.2
15
42
2.1
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
60
°C/W
Device Marking
FDMC2610
Device
FDMC2610
Package
MLP3.3X3.3
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
FDMC2610 Rev.B
1
www.fairchildsemi.com

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