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PDF RD12MVS1 Data sheet ( Hoja de datos )

Número de pieza RD12MVS1
Descripción Silicon MOSFET Power Transistor
Fabricantes Mitsubishi Electric　
Logotipo Mitsubishi Electric Logotipo



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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
DESCRIPTION
RD12MVS1 is a MOS FET type transistor
specifically designed for VHF RF power
amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
0.2+/-0.05
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
1
FEATURES
High Power Gain:
Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz
High Efficiency: 57%typ. (175MHz)
APPLICATION
For output stage of high power amplifiers in
VHF band mobile radio sets.
INDEX MARK
(Gate)
2
(0.25)
3
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
RoHS COMPLIANT
Note
( ):center value
UNIT:mm
RD12MVS1-101,T112 is a RoHS compliant
products.
RoHS compliance is indicate by the letter “G” after the Lot Marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.)
(0.25)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS
Drain to Source Voltage VGS=0V
VGSS
Gate to Source Voltage VDS=0V
ID Drain Current
Pin Input Power
Zg=Zl=50Ω
Pch
Channel Dissipation
Tc=25°C
Tj Junction Temperature
Tstg Storage Temperature
Rthj-c Thermal Resistance
Junction to Case
Note: Above parameters are guaranteed independently.
RATINGS
50
+/- 20
4
2
50
150
-40 to +125
2.5
UNIT
V
V
A
W
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
LIMITS
MIN. TYP. MAX.
IDSS Zero Gate Voltage Drain Current VDS=17V, VGS=0V
- - 10
IGSS Gate to Source Leak Current VGS=10V, VDS=0V
- -1
VTH Gate Threshold Voltage
VDS=12V, IDS=1mA
1.8 - 4.4
Pout Output Power
f=175MHz,VDD=7.2V
11.5 12
-
ηD Drain Efficiency
Pin=1.0W,Idq=1.0A
55 57
-
VDD=9.2V,Po=12W(Pin Control)
Load VSWR tolerance
f=175MHz,Idq=1.0A,Zg=50Ω
Not destroy
Load VSWR=20:1(All Phase)
Note: Above parameters, ratings, limits and conditions are subject to change.
RD12MVS1
MITSUBISHI ELECTRIC
1/7
UNIT
uA
uA
V
W
%
-
10 Jan 2006

1 page




RD12MVS1 pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA)
Freq.
S11
S21
S12
S22
[MHz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang)
25 0.824 -159.3 26.397 93.4 0.018 -3.3 0.761 -160.3
50 0.816 -169.0 13.193 85.2 0.016 1.4 0.765 -168.1
75 0.817 -171.7 8.716 79.3 0.016 -10.9 0.778 -170.7
100 0.829 -172.8 6.537 74.5 0.016 -14.1 0.787 -170.3
125 0.837 -173.4 5.110 68.5 0.016 -18.2 0.800 -171.7
150 0.845 -173.9 4.117 64.2 0.015 -18.3 0.796 -172.3
175 0.852 -174.0 3.402 60.8 0.016 -15.1 0.810 -172.3
200 0.860 -174.3 2.896 57.2 0.012 -30.4 0.836 -172.2
225 0.870 -175.0 2.525 53.2 0.014 -29.9 0.858 -172.2
250 0.876 -175.0 2.175 48.9 0.013 -24.5 0.855 -173.0
275 0.886 -175.6 1.897 46.5 0.012 -39.4 0.859 -173.3
300 0.891 -175.8 1.675 43.6 0.012 -53.1 0.860 -173.4
325 0.902 -175.9 1.496 41.0 0.014 -32.9 0.886 -174.5
350 0.903 -176.2 1.348 38.3 0.012 -32.2 0.898 -174.6
375 0.909 -176.7 1.208 35.7 0.009 -29.2 0.898 -175.0
400 0.907 -177.6 1.087 33.7 0.009 -21.6 0.893 -175.6
425 0.912 -177.9 0.996 31.6 0.009 -32.5 0.903 -175.7
450 0.923 -178.3 0.912 29.7 0.004 -37.2 0.910 -176.6
475 0.928 -178.5 0.836 27.9 0.008 -25.9 0.917 -176.8
500 0.934 -178.6 0.748 25.8 0.007 -21.3 0.925 -177.3
525 0.932 -178.8 0.707 23.6 0.005 -46.6 0.922 -177.6
550 0.936 -179.2 0.647 23.2 0.006 -25.0 0.922 -177.6
575 0.932 179.6 0.591 20.8 0.004 -40.9 0.939 -178.0
600 0.935 179.1 0.562 20.0 0.003 -33.6 0.939 -178.9
625 0.939 179.2 0.520 17.4 0.003 17.7 0.938 -179.3
650 0.939 179.4 0.485 15.5 0.003 25.4 0.930 -179.5
675 0.943 179.1 0.460 15.6 0.003 51.4 0.932 -179.9
700 0.945 178.7 0.435 15.5 0.002 5.7 0.946 -179.9
725 0.943 177.5 0.407 13.3 0.004 5.6 0.949 179.3
750 0.939 177.2 0.380 12.2 0.001 -16.1 0.940 179.0
775 0.943 176.9 0.358 10.8 0.004 58.8 0.935 178.8
800 0.948 176.8 0.327 8.6 0.002 -6.7 0.943 178.2
825 0.951 177.1 0.308 8.0 0.003 40.4 0.945 177.5
850 0.953 176.7 0.314 8.5 0.003 77.0 0.948 176.8
875 0.952 176.1 0.284 7.0 0.006 46.5 0.946 176.7
900 0.954 175.4 0.269 9.7 0.003 64.5 0.950 176.7
925 0.944 174.4 0.254 6.7 0.007 60.3 0.946 176.0
950 0.951 174.6 0.250 6.0 0.006 69.7 0.952 175.7
975 0.954 175.0 0.232 1.9 0.003 80.3 0.959 175.0
1000 0.955 175.0 0.227 7.8 0.003 86.7 0.950 174.8
RD12MVS1
MITSUBISHI ELECTRIC
5/7
10 Jan 2006

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