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PDF TC1412 Data sheet ( Hoja de datos )
| Número de pieza | TC1412 | |
| Descripción | HIGH-SPEED MOSFET DRIVERS | |
| Fabricantes | TelCom Semiconductor | |
| Logotipo |  |
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1
TC1412
TC1412N
2A HIGH-SPEED MOSFET DRIVERS
FEATURES
s Latch-Up Protected: Will Withstand 500mA
Reverse Current
s Input Will Withstand Negative Inputs Up to 5V
s ESD Protected .....................................................4kV
s High Peak Output Current .................................. 2A
s Wide Operating Range .......................... 4.5V to 16V
s High Capacitive Load
Drive Capability .......................... 1000pF in 18nsec
s Short Delay Time .................................. 35nsec Typ
s Consistent Delay Times With Changes in
Supply Voltage
s Matched Delay Times
s Low Supply Current
— With Logic “1” Input ................................. 500µA
— With Logic “0” Input ................................. 150µA
s Low Output Impedance ....................................... 4Ω
s Pinout Same as TC1410/11/13
PIN CONFIGURATIONS
VDD 1
IN 2
NC 3
GND 4
TC1411
8 VDD
7 OUT
6 OUT
5 GND
VDD 1
IN 2
NC 3
TC1411N
8 VDD
7 OUT
6 OUT
GND 4
5 GND
2 6, 7
2 6, 7
INVERTING
NONINVERTING
NC = NO INTERNAL CONNECTION
NOTE: SOIC pinout is identical to DIP.
GENERAL DESCRIPTION
The TC1412/1412N are 2A CMOS buffer/drivers. They
will not latch up under any conditions within their power and
voltage ratings. They are not subject to damage when up to
5V of noise spiking of either polarity occurs on the ground
pin. They can accept, without damage or logic upset, up to
500 mA of current of either polarity being forced back into
their output. All terminals are fully protected against up to 4
kV of electrostatic discharge.
As MOSFET drivers, the TC1412/1412N can easily
switch 1000 pF gate capacitance in 18 ns with matched rise
and fall times, and provide low enough impedance in both
the ON and the OFF states to ensure the MOSFET’s
intended state will not be affected, even by large transients.
The rise and fall time edges are matched to allow driving
short-duration inputs with greater accuracy.
ORDERING INFORMATION
Part No.
TC1412COA
TC1412CPA
TC1412EOA
TC1412EPA
TC1412NCOA
TC1412NCPA
TC1412NEOA
TC1412NEPA
Package
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
Temp. Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
2
3
4
5
6
FUNCTIONAL BLOCK DIAGRAM
TC1411
INVERTING
OUTPUTS
VDD
INPUT
4.7V
300mV
NONINVERTING
OUTPUTS
TC1411N
OUTPUT
7
GND
EFFECTIVE
INPUT
C = 10pF
TELCOM SEMICONDUCTOR, INC.
8
TC1412/N-7 10/11/96
4-195
1 page  
2A HIGH-SPEED MOSFET DRIVERS
TYPICAL CHARACTERISTICS (Cont.)
Rise Time vs. Supply Voltage
CLOAD = 1800pF
70
60
50
40
TA = 85°C
30
TA = 25°C
20
TA = –40°C
10
4 6 8 10 12 14
VDD (VOLTS)
16
TD1 Propagation Delay vs. Supply Voltage
CLOAD = 1800pF
100
90
80
70
TA = 85°C
60
50 TA = 25°C
40
30 TA = –40°C
20
4 6 8 10 12 14 16
VDD (VOLTS)
Rise and Fall Times vs. Capacitive Load
TA = 25°C, VDD = 16V
60
50 TRISE
40 TFALL
30
20
10
0
0
1000
2000
3000
4000
CLOAD (pF)
TELCOM SEMICONDUCTOR, INC.
5000
1
TC1412
TC1412N
Fall Time vs. Supply Voltage
CLOAD = 1800pF
70
2
60
50
40
TA = 85°C
30
TA = 25°C
20
TA = –40°C
10
4 6 8 10 12
VDD (VOLTS)
14
16
TD2 Propagation Delay vs. Supply Voltage
CLOAD = 1800pF
100
90
80
70
60 TA = 85°C
50
TA = 25°C
40
TA = –40°C
30
20
4 6 8 10 12 14 16
VDD (VOLTS)
Propagation Delays vs. Capacitive Load
TA = 25°C, VDD = 16V
39
3
4
5
6
38 TD2
737
36
35 TD1
34
33
832
0
1000
2000
3000
4000
5000
CLOAD (pF)
4-199
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TC1412.PDF ] | |
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