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Seme LAB - METAL GATE RF SILICON FET

Numéro de référence D1034UK
Description METAL GATE RF SILICON FET
Fabricant Seme LAB 
Logo Seme LAB 





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D1034UK fiche technique
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TetraFET
D1034UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B
A
E
C (2 pls)
K 12 34
FG
87 65
J
Typ .
D
M
Q
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
PIN 1
PIN 3
PIN 5
PIN 7
PI N O H
DD
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
SOURCE (COMMON) PIN 6
GATE 1
PIN 8
DRAIN 1
SOURCE (COMMON)
GATE 2
SOURCE (COMMON)
DIM mm
A 9.14
B 12.70
C 45°
D 6.86
E 0.76
F 9.78
G 19.05
H 4.19
I 3.17
J 1.52R
K 1.65R
M 16.51
N 22.86
O 0.13
P 6.35
Q 10.77
Tol. Inches Tol.
0.13 0.360 0.005
0.13 0.500 0.005
5° 45° 5°
0.13 0.270 0.005
0.13 0.030 0.005
0.13 0.385 0.005
0.25 0.750 0.010
0.13 0.165 0.005
0.13 0.125 0.005
0.13 0.060R 0.005
0.13 0.065R 0.005
0.13 0.650 0.005
0.13 0.900 0.005
0.02 0.005 0.001
0.64 0.250 0.025
0.13 0.424 0.005
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
10A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Document Number 5387
Issue 1

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