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International Rectifier - RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Numéro de référence IRHNJ593034
Description RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Fabricant International Rectifier 
Logo International Rectifier 





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IRHNJ593034 fiche technique
www.DataSheet4U.com
PD - 94608
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ597034 100K Rads (Si)
IRHNJ593034 300K Rads (Si)
RDS(on)
0.06
0.06
ID
-22A
-22A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
IRHNJ597034
60V, P-CHANNEL
4# TECHNOLOGY
c
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-22*
-16 A
-88
75 W
0.6 W/°C
±20 V
107 mJ
-22 A
7.5 mJ
-1.4 V/ns
-55 to 150
oC
300 ( for 5s )
1.0 ( Typical )
g
1
02/13/03

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