|
|
PDF LX5512E Data sheet ( Hoja de datos )
| Número de pieza | LX5512E | |
| Descripción | Power Amplifier | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de LX5512E (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
LX5512E
TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
DESCRIPTION
The LX5512E is a power amplifier For 19dBm OFDM output power
optimized for WLAN applications in (64QAM, 54Mbps), the PA provides a
the 2.4-2.5 GHz frequency range. The low EVM (Error-Vector Magnitude) of
PA is implemented as a three-stage 3 %, and consumes 130 mA total DC
monolithic microwave integrated current.
circuit (MMIC) with active bias and The LX5512E is available in a 16-pin
input/output pre-matching. The device 3mmx3mm micro-lead package (MLP).
is manufactured with an InGaP/GaAs The compact footprint, low profile, and
Heterojunction Bipolar Transistor excellent thermal capability of the MLP
(HBT) IC process (MOCVD). It package makes the LX5512E an ideal
operates at a single low voltage supply solution for high-gain power amplifier
of 3.3V with 34 dB power gain requirements for IEEE 802.11b/g
between 2.4-2.5GHz, at a low applications.
quiescent current of 50 mA.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~50mA
Power Gain ~34dB @ 2.45GHz
and Pout = 19dBm
Total Current 130mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm2)
Low Profile (0.9mm)
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
Copyright 2000
Rev. 1.2, 2004-01-16
PACKAGE ORDER INFO
Plastic MLPQ
LQ 16 pin
LX5512E-LQ
Note: Available in Tape & Reel.
Append the letter “T” to the part number.
(i.e. LX5512E-LQT)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
1 page  
LX5512E
TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRODUCTION DATA SHEET
CHARACTERISTIC CURVES
2.4 GHz
2.45 GHz
2.5 GHZ
-45
-47.5
-50
-52.5
-55
-57.5
-60
0
2 4 6 8 10 12 14 16 18 20 22
Output Power /[dBm]
Figure 3 – ACP with 54MB/s 64 QAM OFDM
(VC = 3.3V, Vref = 2.9V, Icq = 50mA)
2.4 GHz
2.45 GHZ
2.5 GHZ
175
150
125
100
75
50
0
2 4 6 8 10 12 14 16 18 20 22
Output Power /[dBm]
Figure 4 – Current with 54MB/s 64 QAM OFDM
(VC = 3.3V, Vref = 2.9V, Icq = 50mA)
Copyright 2000
Rev. 1.2, 2004-01-16
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet LX5512E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| LX5512B | Power Amplifier | Microsemi Corporation |
| LX5512E | Power Amplifier | Microsemi Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |