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PDF PBSS8110Y Data sheet ( Hoja de datos )
| Número de pieza | PBSS8110Y | |
| Descripción | NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 01 — 2 June 2004
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat transistor in a SOT363 (SC-88) plastic package.
1.2 Features
s SOT363 package
s Low collector-emitter saturation voltage VCEsat
s High collector current capability IC and ICM
s High efficiency reduces heat generation.
1.3 Applications
s Major application segments:
x Automotive 42 V power
x Telecom infrastructure
x Industrial.
s Peripheral driver:
x Driver in low supply voltage applications (e.g. lamps and LEDs)
x Inductive load driver (e.g. relays, buzzers and motors).
s DC-to-DC converter.
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
Conditions
Min Typ Max Unit
- - 100 V
- - 1A
- - 3A
- - 200 mΩ
1 page  
Philips Semiconductors
PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
103
Zth
(K/W)
102
10
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
1
(10)
001aaa797
10−1
10−5
10−4
10−3
10−2
10−1
1
10
Mounted on FR4 PCB; mounting pad for collector = 1 cm2.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Fig 3. Transient thermal impedance as a function of pulse time; typical values.
102 103
tp (s)
7. Characteristics
Table 7: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off
current
collector-emitter
cut-off current
VCB = 80 V; IE = 0 A
VCB = 80 V; IE = 0 A;
Tj = 150 °C
VCE = 80 V; VBE = 0 V
IEBO emitter-base cut-off VEB = 4 V; IC = 0 A
current
hFE
DC current gain
VCE = 10 V; IC = 1 mA
VCE = 10 V; IC = 250 mA
VCE = 10 V; IC = 0.5 A
VCE = 10 V; IC = 1 A
Min Typ Max Unit
- - 100 nA
- - 50 µA
- - 100 nA
- - 100 nA
150
150
[1] 100
[1] 80
-
-
-
-
-
500
-
-
9397 750 12567
Product data sheet
Rev. 01 — 2 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 13
5 Page 
Philips Semiconductors
PBSS8110Y
100 V, 1 A NPN low VCEsat (BISS) transistor
9. Revision history
Table 8: Revision history
Document ID
Release date Data sheet status
PBSS8110Y_1
20040602
Product data
Change notice Order number Supersedes
- 9397 750 12567 -
9397 750 12567
Product data sheet
Rev. 01 — 2 June 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
11 of 13
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| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet PBSS8110Y.PDF ] | |
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