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Panasonic Semiconductor - Silicon NPN epitaxial planar type

Numéro de référence XN0F261
Description Silicon NPN epitaxial planar type
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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XN0F261 fiche technique
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Composite Transistors
XN0F261
Silicon NPN epitaxial planar type
For muting
Features
Two elements incorporated into one package
(Collector-coupled transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
30
20
5
600
300
150
55 to +150
Unit
V
V
V
mA
mW
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
1: Emitter (Tr1)
2: Collector
3: Emitter (Tr2)
EIAJ: SC-74
4: Base (Tr2)
5: N.C.
6: Base (Tr1)
Mini6-G1 Package
Marking Symbol: 6B
Internal Connection
45
6
Tr2 Tr1
Electrical Characteristics Ta = 25°C ± 3°C
32 1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 1 µA, IE = 0
30 V
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20 V
Emitter-base voltage (Collector open) VEBO IE = 1 µA, IC = 0
5V
Collector-base cutoff current (Emitter open) ICBO VCB = 30 V, IE = 0
1 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0
1 µA
Forward current transfer ratio
hFE VCE = 5 V, IC = 50 mA
100 600
Collector-emitter saturation voltage
VCE(sat) IC = 50 mA, IB = 2.5 mA
80 mV
Input resistance
R1
30% 3.3 +30% k
Transition frequency
fT VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2003
SJJ00228AED
1

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