DataSheetWiki


TIM1011-2L fiches techniques PDF

Toshiba Semiconductor - MICROWAVE POWER GaAs FET

Numéro de référence TIM1011-2L
Description MICROWAVE POWER GaAs FET
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





TIM1011-2L fiche technique
www.DataSheet4U.com
TOSHIBA
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER GaAs FET
TIM1011-2L
FEATURES
„ HIGH POWER
P1dB=33.5dBm at 10.7GHz to 11.7GHz
„ HIGH GAIN
G1dB=7.5dB at 10.7GHz to 11.7GHz
„ BROAD BAND INTERNALLY MATCHED
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Compression Point
Power Gain at 1dB
Compression Point
Drain Current
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P1dB
CONDITION
G1dB
IDS1
ηadd
IM3
IDS2
Tch
VDS= 9V
f =10.7-11.7GHz
Two Tone Test
P=22dBm
(Single Carrier Level)
VDS X IDS X Rth(c-c)
MIN.
32.5
6.5
-42
TYP. MAX. UNIT
33.5 dBm
7.5 dB
0.85
24
-45
1.1
A
%
dBc
0.85 1.1
80
A
°C
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL CONDITION
gm VDS= 3V
IDS=1.0A
VGSoff VDS= 3V
IDS= 30mA
IDSS VDS= 3V
VGS= 0V
VGSO IGS= -30µA
MIN. TYP. MAX. UNIT
600 mS
-2.0 -3.5 -5.0 V
2.0 2.6 A
-5  
V
Rth(c-c) Channel to Case
5.0 6.0 °C/W
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No
license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
TOSHIBA CORPORATION
Apr. 2000

PagesPages 5
Télécharger [ TIM1011-2L ]


Fiche technique recommandé

No Description détaillée Fabricant
TIM1011-2L MICROWAVE POWER GaAs FET Toshiba Semiconductor
Toshiba Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche