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PDF IRHY9230CM Data sheet ( Hoja de datos )
| Número de pieza | IRHY9230CM | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
PD-91401
IRHY9230CM
JANSR2N7383
200V, P-CHANNEL
REF: MIL-PRF-19500/615
RAD-Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHY9230CM 100K Rads (Si)
IRHY93230CM 300K Rads (Si)
RDS(on)
0.8Ω
0.8Ω
ID QPL Part Number
-6.5A JANSR2N7383
-6.5A JANSF2N7383
International Rectifier’s RAD-HardTM HEXFET®
MOSFET technology provides high performance
power MOSFETs for space applications. This tech-
nology has over a decade of proven performance
and reliability in satellite applications. These de-
vices have been characterized for both Total Dose
and Single Event Effects (SEE). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These de-
vices retain all of the well established advantages
of MOSFETs such as voltage control, fast switch-
ing, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
-6.5
-4.1 A
-26
75 W
0.6 W/°C
±20 V
165 mJ
-6.5 A
7.5 mJ
-27
-55 to 150
V/ns
oC
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
12/05/00
1 page  
Pre-Irradiation
IRHY9230CM, JANSR2N7383
2500
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
Ciss
1000
500
0
1
Coss
Crss
10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -6.5A
16
12
VDS =-160V
VDS =-100V
VDS =-40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1
TJ = 25 ° C
0.1
0.0
VGS = 0 V
1.0 2.0 3.0 4.0 5.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10 100us
1ms
1 10ms
TC = 25°C
TJ = 150° C
Single Pulse
0.1
10
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHY9230CM.PDF ] | |
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