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PDF IRHY57234CMSE Data sheet ( Hoja de datos )
| Número de pieza | IRHY57234CMSE | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
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PD - 93823
RADIATION HARDENED
POWER MOSFET
THRU-HOLE ( TO-257AA)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHY57234CMSE 100K Rads (Si) 0.41Ω 10A
IRHY57234CMSE
250V, N-CHANNEL
4# TECHNOLOGY
c
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
TO-257AA
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
10
6.4 A
40
75 W
0.6 W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
±20
58
10
7.5
2.4
-55 to 150
V
mJ
A
mJ
V/ns
oC
Lead Temperature
Weight
300 (0.063in./1.6mm from case for 10sec)
4.3( Typical )
g
For footnotes refer to the last page
www.irf.com
1
01/31/01
1 page  
Pre-Irradiation
IRHY57234CMSE
2000
1600
1200
800
400
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 10A
15
VDS = 200V
VDS = 125V
VDS = 50V
10
5
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100 1000
TJ = 150° C
10
OPERATION IN THIS AREA LIMITED
100 BY RDS(ON)
TJ = 25° C
1
0.1
0.4
VGS = 0 V
0.6 0.8 1.0
VSD ,Source-to-Drain Voltage (V)
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
10
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100 1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHY57234CMSE.PDF ] | |
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