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PDF FDP15N65 Data sheet ( Hoja de datos )
| Número de pieza | FDP15N65 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
• 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V
• Low gate charge ( typical 48.5 nC)
• Low Crss ( typical 23.6 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
February 2006
UniFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FDP15N65 FDPF15N65
650
15 15*
9.5 9.5*
60 60*
± 30
637
15
25.0
4.5
250 73.5
2.0 0.59
-55 to +150
300
FDP15N65
0.5
0.5
62.5
FDPF15N65
1.7
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
FDP15N65 / FDPF15N65 Rev. A
1
www.fairchildsemi.com
1 page  
www.DataSheet4U.com
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP15N65
100
D =0.5
1 0 -1
0.2
0 .1
0 .0 5
0 .0 2
1 0 -2
0 .0 1
single pulse
※ N otes :
P1 . ZDθMJC ( t) = 0 .5 ℃ /W M a x .
2. D uty Factor, D = t1/t2
t3 . T JM - T C = P1D M * Z q JC ( t)
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q uare W ave P ulse D uration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FDPF15N65
100 D =0.5
0.2
1 0 -1
0.1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sing le pulse
※ N otes :
P1 . Z θJDCM( t) = 1 .7 ℃ /W M a x .
t2 . D u ty F a c to r , D = t1/t2
3 . T JM - T C = P D1M * Z q JC ( t)
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u lse D u ra tio n [se c]
101
FDP15N65 / FDPF15N65 Rev. A
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDP15N65.PDF ] | |
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