|
|
PDF FDFS6N754 Data sheet ( Hoja de datos )
| Número de pieza | FDFS6N754 | |
| Descripción | Integrated N-Channel PowerTrench MOSFET and Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDFS6N754 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
Final Datasheet
August 2006
FDFS6N754
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode tm
30V, 4A, 56mΩ
Features
Max rDS(on) = 56mΩ at VGS = 0V, ID = 4A
Max rDS(on) = 75mΩ at VGS = 4.5V, ID = 3.5A
VF < 0.45V @ 2A
VF < 0.28V @ 100mA
Schottky and MOSFET incorporated into single power
surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout
for design flexibility
Low Gate Charge (Qg = 4nC)
General Description
The FDFS6N754 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in an SO-
8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance. The independently connected Schottky diode
allows its use in a variety of DC/DC converter topologies.
Applications
DC/DC converters
Low Miller Charge
D
D
C
C
A1
A2
8C
7C
SO-8
Pin 1
G
S
A
A
S3
G4
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note 1a)
PD
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
VRRM
IO
TJ, TSTG
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating and Storage Temperature
(Note 1a)
6D
5D
Ratings
30
±20
4
20
2
1.6
20
2
-55 to 150
Units
V
V
A
W
V
A
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDFS6N754
Device
FDFS6N754
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDFS6N754 Rev. A
1
www.fairchildsemi.com
1 page  
www.DataSheet4U.com
Typical Characteristics TJ = 25°C unless otherwise noted
10
8
6
VDD = 10V
VDD = 20V
4
VDD = 15V
2
0
01234
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5
500
f = 1MHz
Ciss
VGS = 0V
100 Coss
Crss
20
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 8. Capacitance vs Drain to Source Voltage
109
8
7
6
5
4
TJ = 25oC
3
2
1
0.01
0.1 1
tAV, TIME IN AVALANCHE(ms)
2
Figure 9. Unclamped Inductive Switching
Capability
6
5
4 VGS = 10V
3
VGS = 4.5V
2
1 RθJC = 40oC/W
0
25 50
75
100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
100
10us
10
1
0.1
OPERATION IN THIS SINGLE PULSE
AREA MAY BE
TJ = MAX RATED
0.01 LIMITED BY rDS(on) TA = 25OC
0.1 1 10
100us
1ms
10ms
100ms
1s
10s
DC
80
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
100
VGS = 10V
10
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
-1---5---0-1---2-–--5---T---A---
SINGLE PULSE
1
10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
FDFS6N754 Rev. A
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDFS6N754.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDFS6N754 | Integrated N-Channel PowerTrench MOSFET and Schottky Diode | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |