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PDF ADG859 Data sheet ( Hoja de datos )
| Número de pieza | ADG859 | |
| Descripción | 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ADG859 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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1.3 Ω CMOS, 1.8 V to 5.5 V Single SPDT
Switch/2:1 MUX in SOT-66 Package
ADG859
FEATURES
1.8 V to 5.5 V single supply
Tiny 1.65 mm × 1.65 mm package
Low on resistance: 1.3 Ω at 5 V supply
High current-carrying capability
300 mA continuous current
500 mA peak current at 5 V
Rail-to-rail operation
Typical power consumption: <0.01 μW
TTL/CMOS-compatible inputs
APPLICATIONS
Cellular phones
PDAs
MP3 players
Battery-powered systems
Audio and video signal routing
Modems
PCMCIA cards
Hard drives
Relay replacement
GENERAL DESCRIPTION
The ADG859 is a monolithic, CMOS SPDT (single pole, double
throw) switch that operates with a supply range of 1.8 V to
5.5 V. It is designed to offer low on resistance of 2.3 Ω maxi-
mum over the entire temperature range of −40°C to +125°C.
The ADG859 also has the capability of carrying large amounts
of current, typically 300 mA at 5 V operation. These features
make the ADG859 an ideal solution for applications that are
space-constrained, such as handsets, PDAs, and MP3 players.
Each switch conducts equally well in both directions when on.
The device exhibits break-before-make switching action,
thereby preventing momentary shorting when switching
channels.
The ADG859 is available in a tiny 6-lead SOT-66 package.
FUNCTIONAL BLOCK DIAGRAM
ADG859
S2
D
S1
IN
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
Figure 1.
PRODUCT HIGHLIGHTS
1. Low on resistance: 2.3 Ω maximum over the full
temperature range of −40°C to +125°C.
2. High current-carrying capability.
3. Tiny 6-lead, 1.65 mm × 1.65 mm SOT-66 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved.
1 page  
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ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
VDD to GND
Analog Inputs1
Digital Inputs1
Peak Current, S or D
5 V Operation
3 V Operation
Continuous Current, S or D
5 V Operation
3 V Operation
Operating Temperature Range
Automotive
Storage Temperature Range
Junction Temperature
SOT-66 Package (4-Layer Board)
θJA Thermal Impedance
Lead-Free Reflow
Peak Temperature
Time at Peak Temperature
Rating
−0.3 V to +7.0 V
−0.3 V to VDD + 0.3 V or
30 mA, whichever occurs first
−0.3 V to VDD + 0.3 V or
30 mA, whichever occurs first
500 mA
460 mA
300 mA
275 mA
−40°C to +85°C
−65°C to +150°C
150°C
191°C/W
260(+0/−5)°C
10 sec to 40 sec
1 Overvoltages at S or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
ADG859
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability. Only one absolute maximum rating may be
applied at any one time.
Table 4. Truth Table
Logic (IN) Switch 2 (S2)
0 Off
1 On
Switch 1 (S1)
On
Off
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. 0 | Page 5 of 16
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VDD
0.1μF
VDD
IN S1
S2
D
VIN
GND
NC
50Ω
NETWORK
ANALYZER
50Ω
VS
RL VOUT
50Ω
OFF ISOLATION = 20 LOG VOUT
VS
Figure 22. Off Isolation
NETWORK
ANALYZER
VOUT
RL
50Ω
50Ω
VS
VDD
0.1μF
VDD
S1
S2 D
IN
GND
R
50Ω
CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG VOUT
VS
Figure 23. Channel-to-Channel Crosstalk
VDD
0.1μF
VDD
IN S1
S2
D
VIN
GND
NC
NETWORK
ANALYZER
50Ω
VS
RL VOUT
50Ω
VOUT WITH SWITCH
INSERTION LOSS = 20 LOG VOUT WITHOUT SWITCH
Figure 24. Bandwidth
ADG859
Rev. 0 | Page 11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet ADG859.PDF ] | |
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