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PDF HAT1072H Data sheet ( Hoja de datos )
| Número de pieza | HAT1072H | |
| Descripción | Silicon P Channel Power MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAT1072H (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
1 page  
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HAT1072H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
Symbol Min
V
(BR)DSS
-30
IGSS
IDSS
V
GS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
tf
VDF
—
—
-0.5
—
—
36
—
—
—
—
—
—
—
—
—
—
—
trr —
Typ Max Unit Test Conditions
——V
I = -10 mA, V = 0
D GS
—
—
—
3.6
5.3
60
9500
1300
700
155
28
26
28
60
305
140
0.87
± 0.1
-1
-2.0
4.5
7.7
—
—
—
—
—
—
—
—
—
—
—
1.14
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
VGS = -20,+10 V, VDS = 0
VDS = -30 V, VGS = 0
V = -10 V, I = -1 mA
DS D
ID = -20 A, VGS = -10 V Note3
ID = -20 A, VGS = -4.5 V Note3
ID = -20 A, VDS = -10 V Note3
VDS = -10 V
V =0
GS
f = 1 MHz
VDD = -10 V
VGS = -10 V
ID = -40 A
V = -10 V, I = -20 A
GS D
V
DD
≅
-10
V
R
L
=
0.5
Ω
Rg = 4.7 Ω
IF = -40 A, VGS = 0 Note3
110 — ns IF = -40 A, VGS = 0
diF/ dt = 100 A/ µs
Rev.5, May 2002, page 3 of 10
5 Page 
www.DataSheet4U.com
Package Dimensions
4.9
5.3 Max
4.0 ± 0.2
5
0.25 +0.05
–0.03
HAT1072H
As of January, 2002
Unit: mm
3.3
1
1.27
4
0.20 +0.05
–0.03
0.75 Max
0.10
0.40 ± 0.06 0.25 M
0˚ – 8˚
Hitachi Code
JEDEC
JEITA
Mass (reference value)
LFPAK
—
—
0.080 g
Rev.5, May 2002, page 9 of 10
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet HAT1072H.PDF ] | |
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