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What is DR200G?

This electronic component, produced by the manufacturer "EIC discrete Semiconductors", performs the same function as "(DR200G - DR210G) GLASS PASSIVATED JUNCTION SILICON RECTIFIERS".


DR200G Datasheet PDF - EIC discrete Semiconductors

Part Number DR200G
Description (DR200G - DR210G) GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
Manufacturers EIC discrete Semiconductors 
Logo EIC discrete Semiconductors Logo 


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DR200G - DR210G
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
D2
0.161 (4.10)
0.154 (3.90)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.20)
0.268 (6.84)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
DR
200G
DR
201G
DR
202G
DR
204G
DR
206G
DR
208G
DR
210G
VRRM
50 100 200 400 600 800 1000
VRMS
35 70 140 280 420 560 700
VDC 50 100 200 400 600 800 1000
UNIT
Volts
Volts
Volts
IF(AV)
2.0 Amps.
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
50
1.0
5.0
50
75
20
- 65 to + 175
- 65 to + 175
Amps.
Volts
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : MAY 27, 1998


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DR200G electronic component.


Information Total 2 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
DR200The function is (DR200 - DR210) SILICON RECTIFIER DIODES. EIC discrete SemiconductorsEIC discrete Semiconductors
DR200GThe function is (DR200G - DR210G) GLASS PASSIVATED JUNCTION SILICON RECTIFIERS. EIC discrete SemiconductorsEIC discrete Semiconductors

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