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IRFB3077PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFB3077PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFB3077PBF fiche technique
PD - 97047B
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Worldwide Best RDS(on) in TO-220
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G
IRFB3077PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
75V
2.8m:
3.3m:
ID (Silicon Limited) 210A c
S ID (Package Limited) 120A
D
S
D
G
TO-220AB
IRFB3077PbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dV/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy e
Avalanche Current d
Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case k
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient jk
www.irf.com
D
Drain
S
Source
Max.
210c
150c
120
850
370
2.5
± 20
2.5
-55 to + 175
300
10lbxin (1.1Nxm)
200
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.402
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
5/2/11

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