(PDF) OT410T Datasheet - NPN Silicon Phototransistor

Número de pieza	OT410T
Descripción	NPN Silicon Phototransistor
Fabricantes	ETC
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No Preview Available ! www.DataSheet4U.com NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed lens and the OT410T a flat window. • TO - 46 Package • Hermetically Sealed Device ideal for hostile environments • High Sensitivity Specifications: Operating Temperature Range Dimensions in mm -55°C to 125°C PARAMETERS SYMBOL MIN. TYP MAX. Light Current H = 1mW/cm2 OT 410D(T)-1 OT 410D(T)-2 OT 410D(T)-3 I C(ON) 3 (1.5) 5 (2) 12 (4) 15 (6) Dark Current VCE = 10V, H = 0 Collector Emitter Voltage Emitter Collector Voltage Saturation Voltage IC = 1mA Angular Response OT 410D I CED V CED 35 V ECD 6 V CE(SAT) 40 0.50 20 Rise or Fall Time OT 410T OT 410D-1 Φ 80 6 RL = 100Ω VCC = 10V OT 410D-6 tr, tf 8 UNITS mA mA mA nA V V V Deg. Deg. µS µS DataSheet4 U .com Rhopoint Components Ltd Tel: +44 (0) 870 608 1188 Fax: +44 (0) 870 241 2255 Germany: +49 (0) 692 199 8606 Fax: +49 (0) 692 199 8595 Email: [email protected] Website: www.rhopointcomponents.com 1 page

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PDF OT410T Data sheet ( Hoja de datos )