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PDF A1091 Data sheet ( Hoja de datos )
| Número de pieza | A1091 | |
| Descripción | PNP Transistor - 2SA1091 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de A1091 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1091
2SA1091
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
• High voltage: VCBO = −300 V, VCEO = −300 V
• Low saturation voltage: VCE (sat) = −0.5 V (max)
• Small collector output capacitance: Cob = 6 pF (typ.)
• Complementary to 2SC2551.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−300
V
Collector-emitter voltage
VCEO
−300
V
Emitter-base voltage
VEBO −8 V
Collector current
IC
−100
mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
IB −20 mA
PC 400 mW
Tj 150 °C
Tstg
−55~150
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CBO
V (BR) CEO
VCB = −300 V, IE = 0
VEB = −8 V, IC = 0
IC = −0.1 mA, IE = 0
IC = −1 mA, IB = 0
hFE (1)
VCE = −10 V, IC = −20 mA
(Note)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = −10 V, IC = −1 mA
IC = −20 mA, IB = −2 mA
IC = −20 mA, IB = −2 mA
VCE = −10 V, IC = −20 mA
VCB = −20 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 30~90 O: 50~150
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
−300 ⎯
⎯
V
−300 ⎯
⎯
V
30 ⎯ 150
20 ⎯ ⎯
⎯ ⎯ −0.5 V
⎯ ⎯ −1.2 V
40 60 ⎯ MHz
⎯6
8 pF
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet A1091.PDF ] | |
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