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Bourns Electronic Solutions - (BD646 - BD652) PNP SILICON POWER DARLINGTONS

Numéro de référence BD646
Description (BD646 - BD652) PNP SILICON POWER DARLINGTONS
Fabricant Bourns Electronic Solutions 
Logo Bourns Electronic Solutions 





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BD646 fiche technique
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BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
Designed for Complementary Use with
BD645, BD647, BD649 and BD651
62.5 W at 25°C Case Temperature
8 A Continuous Collector Current
Minimum hFE of 750 at 3V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TL
-80
-100
-120
-140
-60
-80
-100
-120
-5
-8
-12
-0.3
62.5
2
50
-65 to +150
-65 to +150
260
V
V
V
A
A
A
W
W
mJ
°C
°C
°C
NOTES: 1. This value applies for tp 0.3 ms, duty cycle 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = -20 V.
PRODUCT INFORMATION
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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