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T221160A fiches techniques PDF

Taiwan Memory Technology - 64K x 16 DYNAMIC RAM FAST PAGE MODE

Numéro de référence T221160A
Description 64K x 16 DYNAMIC RAM FAST PAGE MODE
Fabricant Taiwan Memory Technology 
Logo Taiwan Memory Technology 





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T221160A fiche technique
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tm TE
CH
DRAM
T221160A
64K x 16 DYNAMIC RAM
FAST PAGE MODE
FEATURES
High speed access time : 25/30/35/40 ns
Industry-standard x 16 pinouts and timing
functions.
Single 5V (±10%) power supply.
All device pins are TTL- compatible.
256-cycle refresh in 4ms.
Refresh modes: RAS only, CAS BEFORE
RAS (CBR) and HIDDEN.
Conventional FAST PAGE MODE access cycle.
BYTE WRITE and BYTE READ access cycles.
PART NUMBER EXAMPLES
PART NUMBER ACCESS TIME PACKAGE
T221160A-30J
30ns
SOJ
T221160A-30S
T221160A-35J
T221160A-35S
30ns
35ns
35ns
TSOP-II
SOJ
TSOP-II
GENERAL DESCRIPTION
The T221160A is a randomly accessed solid state
memory containing 1,048,551 bits organized in a
x16 configuration. The T221160A has both BYTE
WRITE and WORD WRITE access cycles via two
CAS pins. It offers Fast Page mode operation
The T221160A CAS function and timing are
determined by the first CAS to transition low and
by the last to transition back high. Use only one of
the two CAS and leave the other staying high
during WRITE will result in a BYTE WRITE.
CASL transiting low in a WRITE cycle will write
data into the lower byte (IO1~IO8), and CASH
transiting low will write data into the upper byte
(IO9~16).
PIN ASSIGNMENT ( Top View )
Vcc
I/01
I/02
I/03
I/04
Vcc
I/05
I/06
I/07
I/08
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
SOJ
40 Vss
39 I/016
38 I/015
37 I/014
36 I/013
35 Vss
34 I/012
33 I/011
32 I/010
31 I/09
30 NC
29 CASL
28 CASH
27 OE
26 NC
25 A7
24 A6
23 A5
22 A4
21 VSS
Vcc 1
I/01 2
I/02 3
I/03 4
I/04 5
Vcc 6
I/05 7
I/06 8
I/07 9
I/08 10
NC
NC
WE
RAS
NC
A0
A1
A2
A3
Vcc
11
12
13
14
15
16
17
18
19
20
T S O P (II)
40 Vss
39 I/016
38 I/015
37 I/014
36 I/013
35 Vss
34 I/012
33 I/011
32 I/010
31 I/09
30 NC
29 CASL
28 CASH
27 OE
26 NC
25 A7
24 A6
23 A5
22 A4
21 VSS
Taiwan Memory Technology, Inc. reserves the right P. 1
to change products or specifications without notice.
Publication Date: FEB. 2002
Revision:A
DataSheet4 U .com

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