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PDF ADL5350 Data sheet ( Hoja de datos )

Número de pieza ADL5350
Descripción LF to 4 GHz High Linearity Y-Mixer
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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Preliminary Technical Data
FEATURES
Broadband RF, IF, and LO ports
Conversion loss: 6 dB
Noise figure: 6 dB
High input IP3: 26 dBm
High input P1dB: 17 dBm
Low LO drive level
Single-ended design: no need for baluns
Single-supply operation: 3 V @ 10 mA
Miniature 8-lead 3 mm x 2 mm LFCSP package
RoHS compliant
APPLICATIONS
Cellular base station
Point-to-point radio links
RF instrumentation
GENERAL DESCRIPTION
The ADL5350 is a high linearity, up-and-down converting mixer
capable of operating over a broad input frequency range. It is well
suited for demanding cellular base-station mixer designs that
require high sensitivity and efficient blocker immunity. Based
on a GaAs pHEMT single-ended mixer architecture, the ADL5350
provides excellent input linearity and low noise figure without
the need for a high power level, local oscillator (LO) drive.
In 850 MHz/900 MHz receive applications, the ADL5350
provides a typical conversion loss of only 6 dB. The integrated
LO amplifier allows a low LO drive level, typically only 4 dBm
for most applications. The input IP3 is typically greater than
25 dBm, with an input compression point of 17 dBm. The high
input linearity of the ADL5350 makes the device an excellent
mixer for communications systems that require high blocker
immunity, such as GSM 850/900 and 800 MHz CDMA2000. At
2 GHz, a slightly greater supply current is required to obtain
similar performance.
LF to 4 GHz
High Linearity Y-Mixer
ADL5350
FUNCTIONAL BLOCK DIAGRAM
RF
INPUT OR
OUTPUT
RF
GND
ADL5350
IF
OUTPUT OR
INPUT
IF
GC
3V
VPOS
GND
LO
LO
INPUT
Figure 1.
For low frequency applications, the ADL5350 provides access to
the gate contact of the output-mixing device. This allows an
external LO coupling capacitor to be applied between the
VPOS pin and GC pin, helping to improve the LO drive to the
switching device. Using a single 100 pF capacitor allows high
performance at the lower LO frequencies.
The single-ended broadband RF/IF port allows the device to be
customized for a desired band of operation using simple
external filter networks. The LO to RF isolation is based on the
LO rejection of the RF port filter network. Greater isolation
may be achieved using higher order filter networks as described
in the Applications section of this data sheet.
The ADL5350 is fabricated on a GaAs pHEMT high
performance IC process. The ADL5350 is available in a
3 mm × 2 mm 8-lead LFCSP package. It operates over a
40°C to +85°C temperature range. An evaluation board is also
available.
Rev. PrC
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
DataSheet4 U .com
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
© 2005 Analog Devices, Inc. All rights reserved.

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ADL5350 pdf
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Preliminary Technical Data
ADL5350
1950 MHz SPUR TABLE
Table 5.
012
0 −7.8 −2.08 −16.6
1 −9.6 −7.81 −36.2
2 −54.7 −74.9 −54
3 −81.1 −78.6 −78.7
4 N.M.1 −78 −83.8
5 N.M.1 N.M.1 −73.9
6 N.M.1 N.M.1 N.M.1
7 N.M.1 N.M.1 N.M.1
8 N.M.1 N.M.1 N.M.1
9 N.M.1 N.M.1 N.M.1
10 N.M.1 N.M.1 N.M.1
11 N.M.1 N.M.1 N.M.1
12 N.M.1 N.M.1 N.M.1
13 N.M.1 N.M.1 N.M.1
14 N.M.1 N.M.1 N.M.1
15 N.M.1 N.M.1 N.M.1
3
−31.7
−27.2
−62
−85.4
−86.4
−82.8
−80.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
4
N.M.1
−41.1
−58.5
−82.1
−84.1
−82.3
−82.1
−79
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
5
N.M.1
−28
−78.6
−75.6
−79.2
−87.8
−86.7
−80.6
−79.6
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
6
N.M.1
N.M.1
−57.2
−79.6
−77.5
−80.1
−83.4
−80
−83.2
−83.7
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
M
78
N.M.1 N.M.1
N.M.1 N.M.1
N.M.1 N.M.1
−79.4 N.M.1
−77.2 −81.9
−74.7 −79.3
−80.7 −88.2
−76.5 −81.4
−81.5 −81.5
−89 −83.1
N.M.1 −80.9
N.M.1 N.M.1
N.M.1 N.M.1
N.M.1 N.M.1
N.M.1 N.M.1
N.M.1 N.M.1
9
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
−82.1
−79.5
−81.8
−85.5
−79.7
−76.4
−77.8
N.M.1
N.M.1
N.M.1
N.M.1
10
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
−86.3
−75.2
−80.9
−80.6
−82.7
−81.8
−79.6
N.M.1
N.M.1
N.M.1
11
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
−77.4
−79.3
−81
−79.2
−79.7
−78.7
−74.4
N.M.1
N.M.1
12
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
−79.5
−82.9
−78.8
−88.3
−77.6
−81.6
−78.9
N.M.1
13
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
−78.7
−77.9
−73.9
−87.1
−83
−82
−78.7
14
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
−80.7
−80.9
−86.6
−82.9
−74.6
−73.1
15
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
N.M.1
−79.6
−79.5
−76.7
−80.7
−80.4
−78.1
1 N.M. indicates that a frequency was not measured. N.M. spurs are either less than −100 dBm or correspond to a frequency greater than 5995 MHz.
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Preliminary Technical Data
820 MHz CHARACTERISTICS
8
7
6
5
4
3
2
1
0
50 100 150 200 250 300
IF FREQUENCY (MHz)
Figure 21. Noise Figure vs. IF Frequency
350 380
70
60
50
40
30
20
10
0
–5 –3 –1
3579
LO LEVEL (dBm)
11 13 15
Figure 22. Current vs. LO Level
7.4
7.2
+85°C
7.0
6.8
+25°C
6.6
6.4
–40°C
6.2
6.0
–5 –3 –1
3579
LO LEVEL (dBm)
11 13 15
Figure 23. Conversion Loss vs. LO Level
ADL5350
30
29
28
27
26
25
24
23
22
21
20
–5 –3 –1
13579
LO LEVEL (dBm)
Figure 24. IIP3 vs. LO Level
11 13 15
22
21
20
19
18
17
16
15
–5 –3 –1
13579
LO LEVEL (dBm)
11 13 15
Figure 25. Input Compression vs. LO Level
12
10
VPOS = 5V
8
6
VPOS = 3V
4
2
0
–6 –4 –2
024
LO LEVEL (dBm)
6
Figure 26. Noise Figure vs. LO Level
8 10
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