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PDF FDM21-05QC Data sheet ( Hoja de datos )

Número de pieza FDM21-05QC
Descripción Q-Class Power MOSFETs
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! FDM21-05QC Hoja de datos, Descripción, Manual

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Q-Class
Power MOSFETs
Chopper Topologies
in ISOPLUS i4-PACTM
Preliminary data
FMD
3
4
1
2
FMD 21-05QC
FDM 21-05QC
ID25 = 21 A
VDSS = 500 V
RDSon typ. = 190 m
FDM
3
5
4
2
1
5
MOSFET
Symbol
VDSS
VGS
ID25
ID90
Symbol
RDSon
VGSth
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
R
thJC
RthJH
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
Maximum Ratings
500 V
±20 V
21 A
15 A
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = ID90
VDS = 20 V; ID = 0.25 mA
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 0.5 • VDSS; ID = 14 A
220 m
2.5 4.5 V
250 µA
250 µA
200 nA
95 nC
20 nC
42 nC
VGS= 10 V; VDS = 0.5 • VDSS
ID = 14 A; RG = 2
20 ns
20 ns
50 ns
15 ns
with heat transfer paste
0.5 K/W
0.93 K/W
Features
• Q-Class Power MOSFET technology
- low RDSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
• HiPerDynTM FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
• ISOPLUS i4-PACTM package
- isolated back surface
- UL registered E72873
- low coupling capacity
between pins and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
Applications
• chopper for power factor correction
• supply of high frequency transformer
- switched mode power supplies
- welding converters
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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