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IRHNJ68130 fiches techniques PDF

International Rectifier - (IRHNJ6x130) MOSFET

Numéro de référence IRHNJ68130
Description (IRHNJ6x130) MOSFET
Fabricant International Rectifier 
Logo International Rectifier 





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IRHNJ68130 fiche technique
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PD - 95816
RADIATION HARDENED
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ67130 100K Rads (Si)
IRHNJ63130 300K Rads (Si)
IRHNJ64130 600K Rads (Si)
IRHNJ68130 1000K Rads (Si)
RDS(on)
0.042
0.042
0.042
0.042
ID
22A*
22A*
22A*
22A*
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
www.irf.com
IRHNJ67130
100V, N-CHANNEL
TECHNOLOGY
SMD-0.5
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
22*
19
88
75
0.6
±20
73
22
7.5
3.8
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
1
05/10/04
DataSheet4 U .com

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