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PDF PBSS2540M Data sheet ( Hoja de datos )
| Número de pieza | PBSS2540M | |
| Descripción | 0.5 A NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BOTTOM VIEW
M3D883
PBSS2540M
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
Product specification
2003 Jul 22
DataSheet4 U .com
1 page  
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Philips Semiconductors
40 V, 0.5 A
NPN low VCEsat (BISS) transistor
1200
handbook, halfpage
hFE
1000
800
(1)
MHC082
600
(2)
400
(3)
200
0
10−1
1
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10 102 103
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
Product specification
PBSS2540M
1200
handbook, halfpage
VBE
(mV)
1000
800
600
(1)
(2)
MHC085
400
(3)
200
10−1
1
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10 102 103
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
MHC086
102
(1)
(2)
(3)
1100−1
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10 102 103
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
VBEsat
(mV)
1000
800
600
(1)
(2)
MHC084
400 (3)
200
10−1
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10 102 103
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Jul 22
5
DataSheet4 U .com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PBSS2540M.PDF ] | |
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