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PDF IRHF9130 Data sheet ( Hoja de datos )
| Número de pieza | IRHF9130 | |
| Descripción | TRANSISTOR P-CHANNEL | |
| Fabricantes | International Rectifier | |
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PD - 90882F
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF9130
JANSR2N7389
100V, P-CHANNEL
REF: MIL-PRF-19500/630
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF9130 100K Rads (Si)
IRHF93130 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID QPL Part Number
-6.5A JANSR2N7389
-6.5A JANSF2N7389
International Rectifier’s RAD-Hard HEXFETTM technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rds(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n SimpleDriveRequirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-6.5
-4.1 A
-26
25 W
0.2 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
±20
165
-6.5
2.5
-22
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 ( 0.063 in. (1.6mm) from case for 10s)
oC
Weight
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
2/18/03
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1 page  
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Pre-Irradiation
IRHF9130
2000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
Ciss
1000
500
0
1
Coss
Crss
10 100
-VDS , Drain-to-Source Voltage (V)
Fig5. TypicalCapacitanceVs.
Drain-to-SourceVoltage
20 ID = -6.5
16
12
VDS =-80V
VDS =-50V
VDS =-20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig6. TypicalGateChargeVs.
Gate-to-SourceVoltage
100
10
TJ = 150° C
1
TJ = 25°C
0.1
0.2
VGS = 0 V
1.0 1.8 2.6 3.4
-VSD ,Source-to-Drain Voltage (V)
4.2
Fig7. TypicalSource-DrainDiode
ForwardVoltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100us
10
1ms
TC= 25°C
TJ = 150 ° C
Single Pulse
1
1 10
10ms
100
-VDS , Drain-to-Source Voltage (V)
1000
Fig8. MaximumSafeOperatingArea
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHF9130.PDF ] | |
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