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PDF IRHF57230SE Data sheet ( Hoja de datos )
| Número de pieza | IRHF57230SE | |
| Descripción | RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 93857B
IRHF57230SE
RADIATION HARDENED
POWER MOSFET
THRU-HOLE ( TO-39)
JANSR2N7498T2
200V, N CHANNEL
REF:MIL-PRF-19500/706
4#c TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHF57230SE 100K Rads (Si)
RDS(on)
0.24Ω
ID QPL Part Number
7.0A JANSR2N7498T2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
TO-39
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Ratings
n Dynamic dv/dt Ratings
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
7.0
4.5 A
28
25 W
0.2 W/°C
±20 V
130 mJ
7.0 A
2.5 mJ
4.2 V/ns
-55 to 150
oC
300 (0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
09/10/03
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1 page  
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Pre-Irradiation
IRHF57230SE, JANSR2N7498T2
2000
1600
1200
800
400
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 7.0A
16
VDS = 160V
VDS = 100V
VDS = 40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150° C
1 TJ = 25 ° C
0.1
0.2
VGS = 0 V
0.8 1.4 2.0
VSD ,Source-to-Drain Voltage (V)
2.6
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µs
1 1ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10ms
1.0 10 100 1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHF57230SE.PDF ] | |
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