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PDF IRHF3110 Data sheet ( Hoja de datos )
| Número de pieza | IRHF3110 | |
| Descripción | (IRHFx110) RADIATION HARDENED POWER MOSFET THRU-HOLE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 90671D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF7110
100V, N-CHANNEL
RAD Hard HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHF7110
100K Rads (Si) 0.60Ω
IRHF3110
300K Rads (Si) 0.60Ω
IRHF4110
600K Rads (Si) 0.60Ω
IRHF8110 1000K Rads (Si) 0.60Ω
ID
3.5A
3.5A
3.5A
3.5A
TO-39
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
3.5
2.2 A
14
15 W
0.12
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
68
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 ( 0.063 in.(1.6mm) from case for 10s)
Weight
0.98 (Typical )
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
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1
8/10/01
1 page  
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Pores-tI-rIrraaddiiaattiioonn
IRHF7110
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
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Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
5
5 Page 
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Pre-Irradiation
IRHF7110
15V
VDS
L
DRIVER
RG
2V0V/5
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 28a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 28b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 29a. Basic Gate Charge Waveform
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Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
+
D.U.T. -VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRHF3110.PDF ] | |
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