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International Rectifier - (IRHNJ5x230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

Numéro de référence IRHNJ57230
Description (IRHNJ5x230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
Fabricant International Rectifier 
Logo International Rectifier 





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IRHNJ57230 fiche technique
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PD - 93753A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ57230 100K Rads (Si)
IRHNJ53230 300K Rads (Si)
IRHNJ54230 600K Rads (Si)
IRHNJ58230 1000K Rads (Si)
RDS(on)
0.20
0.20
0.20
0.25
ID
13A
13A
13A
13A
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
www.irf.com
IRHNJ57230
200V, N-CHANNEL
4# TECHNOLOGY
c
SMD-0.5
Features:
n Single Event Effect (SEE) Hardened
n Ultra low RDS(on)
n Low Total Gate Charge
n Proton Tolerant
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Pre-Irradiation
Units
13
8.2 A
52
75 W
0.6 W/°C
±20 V
60 mJ
13 A
7.5 mJ
4.4
-55 to 150
V/ns
oC
300 ( for 5s )
1.0 ( Typical )
g
1
07/22/02
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