IRHNJ57034 Datasheet PDF - International Rectifier
| Part Number | IRHNJ57034 | |
| Description | (IRHNJ5x034) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
| Manufacturers | International Rectifier | |
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PD-93752C
IRHNJ57034
RADIATION HARDENED
JANSR2N7480U3
POWER MOSFET
60V, N-CHANNEL
SURFACE MOUNT (SMD-0.5)
Product Summary
REF: MIL-PRF-19500/703
5 TECHNOLOGY
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHNJ57034 100K Rads (Si) 0.030Ω 22A* JANSR2N7480U3
IRHNJ53034 300K Rads (Si) 0.030Ω 22A* JANSF2N7480U3
IRHNJ54034 600K Rads (Si) 0.030Ω 22A* JANSG2N7480U3
IRHNJ58034 1000K Rads (Si) 0.038Ω 22A* JANSH2N7480U3
SMD-0.5
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low Rdson and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
22*
21
88
75
0.6
±20
100
22
7.5
10
-55 to 150
300 (for 5s)
1.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/16/04
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Pre-Irradiation
IRHNJ57034, JANSR2N7480U3
2500
2000
VCGissS
=
=
0V,
Cgs
+
f = 1MHz
Cgd , Cds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
1000
500
0
1
Ciss
Coss
Crss
10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 22A
15
VDS = 48V
VDS = 30V
VDS = 12V
10
5
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
TJ = 150° C
10
1
TJ = 25° C
0.1
0.4
VGS = 0 V
0.6 0.8 1.0 1.2
VSD ,Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1 10
1ms
10ms
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
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| Information | Total 8 Pages | |
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| IRHNJ57034 | The function is (IRHNJ5x034) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5). International Rectifier | |
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