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PDF IRHNB8160 Data sheet ( Hoja de datos )
| Número de pieza | IRHNB8160 | |
| Descripción | (IRHNBx160) RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) | |
| Fabricantes | International Rectifier | |
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PD - 91795A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-3)
IRHNB7160
100V, N-CHANNEL
RAD Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNB7160 100K Rads (Si)
IRHNB3160 300K Rads (Si)
IRHNB4160 600K Rads (Si)
IRHNB8160 1000K Rads (Si)
RDS(on)
0.040Ω
0.040Ω
0.040Ω
0.040Ω
ID
51A
51A
51A
51A
International Rectifier’s RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
SMD-3
Features:
! Single Event Effect (SEE) Hardened
! Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Ceramic Package
! Surface Mount
! Light Weight
Pre-Irradiation
51
32.5
204
300
2.4
±20
500
51
30
7.3
-55 to 150
300 ( for 5 sec)
3.5 (Typical )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
12/10/01
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1 page  
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Pre-Irradiation
IRHNB7160
10000
8000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
6000
Ciss
4000
2000
0
1
Coss
Crss
10 100
VDS , Drain-to-Source Voltage (V)
20
ID = 51A
16
VDS = 80V
VDS = 50V
VDS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240 280
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
TJ = 150 C
10
TJ = 25 C
VGS = 0 V
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VSD ,Source-to-Drain Voltage (V)
100 100us
1ms
10 10ms
TC = 25 C
TJ = 150 C
Single Pulse
1
1 10
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
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| PDF Descargar | [ Datasheet IRHNB8160.PDF ] | |
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