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PDF IRHNA8160 Data sheet ( Hoja de datos )
| Número de pieza | IRHNA8160 | |
| Descripción | (IRHNA7160 / IRHNA8160) TRANSISTOR N-CHANNEL | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Provisional Data Sheet No. PD-9.1396
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRHNA7160
IRHNA8160
N-CHANNEL
MEGA RAD HARD
100 Volt, 0.045Ω, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under identical pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required.These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the RAD HARD
process utilizes International Rectifier’s patented
HEXFET technology, the user can expect the highest
quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
BVDSS
IRHNA7160
100V
IRHNA8160
100V
RDS(on)
0.045Ω
0.045Ω
ID
51A
51A
Features:
n Radiation Hardened up to 1 x 106 Rads (Si)
n Single Event Burnout (SEB) Hardened
n Single Event Gate Rupture (SEGR) Hardened
n Gamma Dot (Flash X-Ray) Hardened
n Neutron Tolerant
n Identical Pre- and Post-Electrical Test Conditions
n Repetitive Avalanche Rating
n Dynamic dv/dt Rating
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Lightweight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
Pre-Radiation
IRHNA7160, IRHNA8160
51
32.5
204
300
2.0
±20
500
51
30
5.5
-55 to 150
300 (for 5 sec.)
3.3 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
oC
g
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